公开(公告)号：US20160300904A1

公开(公告)日：2016-10-13

申请号：US15184261

申请日：2016-06-16

Applicant: ABB Technology AG

Inventor： Marina Antoniou ,  Florin Udrea ,  Iulian Nistor ,  Munaf Rahimo ,  Chiara Corvasce

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

Abstract: A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.

Abstract translation: 描述了IGBT的终端区域，其中表面p环与氧化物/多晶硅填充的沟槽，埋入的p环和表面场板组合，以便获得终止区域中的电位场线的改进的分布。 表面环终止和深环终止的组合提供了终端区域所需的硅面积的显着减少。