公开(公告)号：US20160284708A1

公开(公告)日：2016-09-29

申请号：US15078602

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Neophythos Lophitis ,  Florin Udrea ,  Umamaheswara Vemulapati ,  lulian Nistor ,  Martin Arnold ,  Jan Vobecky ,  Munaf Rahimo

IPC: H01L27/102 ,  H01L29/417 ,  H01L29/87

CPC classification number: H01L27/1027 ,  H01L29/0696 ,  H01L29/0839 ,  H01L29/41716 ,  H01L29/7416 ,  H01L29/744 ,  H01L29/87

Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

Abstract translation: 提供了一种RC功率半导体，其包括多个二极管单元和多个GCT单元。 每个GCT单元包括具有至少三个阴极层区域的第一阴极层，其通过基底层彼此分离。 在与第一主面平行的平面上的正交投影中，每个阴极层区域是带状的和宽度（w，w'），其中二极管单元在横向方向上与至少一个 混合部分，其中在每个GCT单元中，与所述GCT单元相邻的二极管单元旁边的两个外部阴极层区域中的每一个的宽度（w'）小于所述GCT单元之间的任何中间阴极层区域的宽度（w） 该GCT电池中的两个外阴极层区域。

公开(公告)号：US09543305B2

公开(公告)日：2017-01-10

申请号：US15078602

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Neophythos Lophitis ,  Florin Udrea ,  Umamaheswara Vemulapati ,  Lulian Nistor ,  Martin Arnold ,  Jan Vobecky ,  Munaf Rahimo

IPC: H01L29/66 ,  H01L27/102 ,  H01L29/87 ,  H01L29/417

CPC classification number: H01L27/1027 ,  H01L29/0696 ,  H01L29/0839 ,  H01L29/41716 ,  H01L29/7416 ,  H01L29/744 ,  H01L29/87

Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

Abstract translation: 提供了一种RC功率半导体，其包括多个二极管单元和多个GCT单元。 每个GCT单元包括具有至少三个阴极层区域的第一阴极层，其通过基底层彼此分离。 在与第一主面平行的平面上的正交投影中，每个阴极层区域是带状的和宽度（w，w'），其中二极管单元在横向方向上与至少一个 混合部分，其中在每个GCT单元中，与所述GCT单元相邻的二极管单元旁边的两个外部阴极层区域中的每一个的宽度（w'）小于所述GCT单元之间的任何中间阴极层区域的宽度（w） 该GCT电池中的两个外阴极层区域。

公开(公告)号：US20160300904A1

公开(公告)日：2016-10-13

申请号：US15184261

申请日：2016-06-16

Applicant: ABB Technology AG

Inventor： Marina Antoniou ,  Florin Udrea ,  Iulian Nistor ,  Munaf Rahimo ,  Chiara Corvasce

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

Abstract: A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.

Abstract translation: 描述了IGBT的终端区域，其中表面p环与氧化物/多晶硅填充的沟槽，埋入的p环和表面场板组合，以便获得终止区域中的电位场线的改进的分布。 表面环终止和深环终止的组合提供了终端区域所需的硅面积的显着减少。