公开(公告)号：US08847277B2

公开(公告)日：2014-09-30

申请号：US13852366

申请日：2013-03-28

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Martin Arnold ,  Thomas Stiasny

IPC: H01L29/66 ,  H01L21/332

CPC classification number: H01L29/747 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7416 ,  H01L29/7428 ,  H01L29/744

Abstract: An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells.

Abstract translation: 一种示例性的反向导电功率半导体器件，其具有与第一主侧平行的第一主侧和第二主侧的晶片。 该装置包括多个二极管单元和多个IGCT单元，每个IGCT单元包括在第一和第二主侧之间：第一阳极电极，第一阳极电极上的第一导电类型的第一阳极层，缓​​冲层 在第一阳极层上具有第二导电类型的漂移层，缓冲层上的第二导电类型的漂移层，漂移层上的第一导电类型的基极层，基底层上的第二导电类型的第一阴极层 和第一阴极层上的阴极电极。 混合部分包括与IGCT电池的第一阴极层交替的二极管单元的第二阳极层。

公开(公告)号：US20160071815A1

公开(公告)日：2016-03-10

申请号：US14940635

申请日：2015-11-13

Applicant: ABB Technology AG

Inventor： Thomas Stiasny

IPC: H01L23/00

CPC classification number: H01L23/051 ,  H01L23/32 ,  H01L23/544 ,  H01L24/72 ,  H01L24/90 ,  H01L2223/54426 ,  H01L2924/1301 ,  H01L2924/13022 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

Abstract: A spacer system for a semiconductor switching device which is formed as a spacer ring and a plurality of insulating elements and supporting elements are arranged in an alternating manner around a circumference of the spacer ring. The insulating element includes a recess receiving a cathode gate connector element. The supporting element includes a projection receiving a spring system for damping while assembling the switching device. The switching device includes a substrate, a cathode pole piece, an anode pole piece, strain buffer plates and a gate ring. Further connector elements, are electrically connecting the cathode pole piece and the gate ring of the semiconductor switching device to an external circuit unit. The space between the connector elements is minimised in order to reduce the gate circuit impedance, thus enabling an increased maximum turn-off current and further allowing for the use of larger semiconductor switching devices for high power applications.

Abstract translation: 用于半导体开关器件的间隔器系统，其形成为间隔环和多个绝缘元件和支撑元件，以交替的方式围绕隔离环的圆周布置。 绝缘元件包括接收阴极栅极连接器元件的凹部。 支撑元件包括突出部，该突起在组装开关装置时接收用于阻尼的弹簧系统。 开关装置包括基板，阴极极片，阳极极片，应变缓冲板和栅极环。 另外的连接器元件将阴极极片和半导体开关器件的栅极环电连接到外部电路单元。 连接器元件之间的空间被最小化以便减小门电路阻抗，从而能够增加最大关断电流，并进一步允许使用较大的半导体开关器件用于大功率应用。