公开(公告)号：US10431562B1

公开(公告)日：2019-10-01

申请号：US16260794

申请日：2019-01-29

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Thomas P. Dolbear ,  Daniel Cavasin ,  Sanjay Dandia

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L21/48 ,  H01L25/065 ,  C23C16/34 ,  C23C16/06

Abstract: An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin.

公开(公告)号：US10242962B1

公开(公告)日：2019-03-26

申请号：US15669361

申请日：2017-08-04

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Thomas P. Dolbear ,  Daniel Cavasin ,  Sanjay Dandia

IPC: H01L23/34 ,  H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L21/48 ,  H01L21/78 ,  H01L25/065 ,  C23C16/06 ,  C23C16/34

Abstract: An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin.

公开(公告)号：US10957669B2

公开(公告)日：2021-03-23

申请号：US16540134

申请日：2019-08-14

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Thomas P. Dolbear ,  Daniel Cavasin ,  Sanjay Dandia

IPC: H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L21/48 ,  H01L21/78 ,  H01L25/065 ,  C23C16/06 ,  C23C16/34 ,  H01L25/18 ,  H01L23/36

Abstract: An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin. An indium preform is placed between the second adhesion layer and the lid and the indium preform is reflowed.

公开(公告)号：US11488922B2

公开(公告)日：2022-11-01

申请号：US17185605

申请日：2021-02-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Thomas P. Dolbear ,  Daniel Cavasin ,  Sanjay Dandia

IPC: H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L21/48 ,  H01L21/78 ,  H01L25/065 ,  C23C16/06 ,  C23C16/34 ,  H01L25/18 ,  H01L23/36

Abstract: An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin. An indium preform is placed between the second adhesion layer and the lid and the indium preform is reflowed.

公开(公告)号：US20210183805A1

公开(公告)日：2021-06-17

申请号：US17185605

申请日：2021-02-25

Applicant: Advanced Micro Devices, Inc.

Inventor： Thomas P. Dolbear ,  Daniel Cavasin ,  Sanjay Dandia

IPC: H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L21/48 ,  H01L21/78 ,  H01L25/065

Abstract: An integrated circuit device wafer includes a silicon wafer substrate and a back side metallization structure. The back side metallization structure includes a first adhesion layer on the back side of the substrate, a first metal later over the first adhesion layer, a second metal layer over the first metal layer, and a second adhesion layer over the second metal layer. The first includes at least one of: silicon nitride and silicon dioxide. The first metal layer includes titanium. The second metal layer includes nickel. The second adhesion layer includes at least one of: silver, gold, and tin. An indium preform is placed between the second adhesion layer and the lid and the indium preform is reflowed.