公开(公告)号：US10106914B2

公开(公告)日：2018-10-23

申请号：US15081836

申请日：2016-03-25

Applicant: AP SYSTEMS INC.

Inventor： Pil Seong Jeong ,  Sang Hyun Ji ,  Sung Yong Lee ,  Yong Woo Han

IPC: C30B29/06 ,  H01L21/67 ,  H01L29/66 ,  C23C16/56 ,  C23C16/24 ,  C30B28/08

Abstract: The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.