公开(公告)号：US10991617B2

公开(公告)日：2021-04-27

申请号：US16403796

申请日：2019-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V Kesapragada ,  Clinton Goh

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US11289357B2

公开(公告)日：2022-03-29

申请号：US16550521

申请日：2019-08-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi Wada ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Clinton Goh ,  Kai Liang Liew ,  Sarath Babu

IPC: H01L21/683

Abstract: Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately −50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.

公开(公告)号：US11610807B2

公开(公告)日：2023-03-21

申请号：US17227354

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US11569122B2

公开(公告)日：2023-01-31

申请号：US17217179

申请日：2021-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix Deng ,  Yueh Sheng Ow ,  Tuck Foong Koh ,  Nuno Yen-Chu Chen ,  Yuichi Wada ,  Sree Rangasai V. Kesapragada ,  Clinton Goh

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.