公开(公告)号：US20160247695A1

公开(公告)日：2016-08-25

申请号：US14628799

申请日：2015-02-23

Applicant: ASM IP HOLDING B.V.

Inventor： ANTTI JUHANI NISKANEN ,  Jaakko Anttila

IPC: H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32135 ,  H01L21/02074 ,  H01L21/02225 ,  H01L21/02334 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.

Abstract translation: 从铜表面去除钝化膜的方法可以包括将钝化膜暴露于气相有机反应物，例如在100℃至400℃的温度下。在一些实施方案中，钝化膜可以由 铜表面暴露于苯并三唑，例如可能在化学机械平面化过程中发生。 该方法可以作为用于集成电路制造的过程的一部分来执行。 第二材料可以相对于衬底的另一表面选择性地沉积在清洁的铜表面上。