公开(公告)号：US20230207308A1

公开(公告)日：2023-06-29

申请号：US18088041

申请日：2022-12-23

Applicant: ASM IP Holding B.V.

Inventor： Chie Kaneko ,  Ippei Yanagisawa ,  Yu Min Huang

IPC: H01L21/02

CPC classification number: H01L21/02216 ,  H01L21/02211 ,  H01L21/02274 ,  H01J37/32091

Abstract: Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.

公开(公告)号：US20210265158A1

公开(公告)日：2021-08-26

申请号：US17182321

申请日：2021-02-23

Applicant: ASM IP Holding B.V.

Inventor： Chie Kaneko

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/50

Abstract: Methods and systems for forming a cured low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, providing plasma power to polymerize the one or more precursors, and curing the low-k material with activated species to form the cured low-k material layer.