公开(公告)号：US20220112602A1

公开(公告)日：2022-04-14

申请号：US17498267

申请日：2021-10-11

Applicant: ASM IP Holding B.V.

Inventor： Kentaro Kojima ,  Takeru Kuwano ,  Eiichiro Shiba

IPC: C23C16/509 ,  H01J37/32 ,  C23C16/56 ,  C23C16/34

Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.

公开(公告)号：US11827981B2

公开(公告)日：2023-11-28

申请号：US17498267

申请日：2021-10-11

Applicant: ASM IP Holding B.V.

Inventor： Kentaro Kojima ,  Takeru Kuwano ,  Eiichiro Shiba

IPC: C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  C23C16/56 ,  C23C16/34

CPC classification number: C23C16/509 ,  C23C16/345 ,  C23C16/56 ,  H01J37/32082 ,  H01J2237/3321

Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.