公开(公告)号：US20240355593A1

公开(公告)日：2024-10-24

申请号：US18136276

申请日：2023-04-18

Applicant: Tokyo Electron Limited

Inventor： Melvin Verbaas ,  Einosuke Tsuda

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01L21/683

CPC classification number: H01J37/32715 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32568 ,  H01L21/6833 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.

公开(公告)号：US20240249923A1

公开(公告)日：2024-07-25

申请号：US18624655

申请日：2024-04-02

Applicant: Kokusai Electric Corporation

Inventor： Akihiro SATO ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

CPC classification number: H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

公开(公告)号：US20240242940A1

公开(公告)日：2024-07-18

申请号：US18401848

申请日：2024-01-02

Applicant: Kioxia Corporation

Inventor： Takuya HIROHASHI

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01L21/02

CPC classification number: H01J37/32458 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/509 ,  H01J37/3244 ,  H01L21/02274 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0217

Abstract: An apparatus includes a process chamber, a stage, a shower head, a plasma generation circuit, and a partition wall. The stage places a substrate. The shower head faces the stage and supplies process gas to the substrate. The plasma generation circuit generates plasma between the shower head and the stage. The partition wall isolates a first space between the shower head and the stage from a second space on a side of the shower head opposite to a side of the stage with a predetermined first gap, such that a pressure in the second space is higher than a pressure in the first space in a state where the process gas is supplied from the shower head, a gas different from the process gas is supplied to the second space, and an inside of the first space is evacuated.

公开(公告)号：US12009186B2

公开(公告)日：2024-06-11

申请号：US16625459

申请日：2018-06-19

Applicant: MEYER BURGER (GERMANY) GMBH

Inventor： Hermann Schlemm ,  Mirko Kehr ,  Erik Ansorge ,  Sebastian Raschke

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/509

CPC classification number: H01J37/32743 ,  C23C16/4586 ,  C23C16/509

Abstract: The invention relates to an apparatus for transporting a substrate into or out of a treatment apparatus, to a treatment apparatus, to a method of processing a substrate and to a treatment system having a movement arrangement for moving such an apparatus for transporting a substrate. In this case, the apparatus for transporting a substrate has a substrate carrier that includes a horizontally extending holding area and one or a plurality of gripping arms. The holding area is even and uniform on a first surface facing the substrate, the shape of said holding area substantially corresponding to the shape of the substrate and the area size of said holding area being substantially the same as the area size of the substrate, the substrate being held with its rear side on the holding area merely by its weight. The treatment apparatus has a receiving plate on which the substrate is held during the treatment, the receiving plate having a recess that is suitable for receiving such a substrate carrier during the treatment of the substrate in a first surface.

公开(公告)号：US11887811B2

公开(公告)日：2024-01-30

申请号：US17014177

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Khokan Chandra Paul ,  Ravikumar Patil

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/458 ,  C23C16/509 ,  H01L21/687

CPC classification number: H01J37/32091 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  H01J2237/2007 ,  H01J2237/20235

Abstract: Exemplary semiconductor substrate supports may include a pedestal having a shaft and a platen. The semiconductor substrate supports may include a cover plate. The cover plate may be coupled with the platen along a first surface of the cover plate. The cover plate may define a recessed channel in a second surface of the cover plate opposite the first surface. The semiconductor substrate supports may include a puck coupled with the second surface of the cover plate. The puck may incorporate an electrode. The puck may define a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate.

公开(公告)号：US11832533B2

公开(公告)日：2023-11-28

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H10N70/00 ,  H01L21/67 ,  H01L21/02 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455 ,  H10N50/01 ,  H10N70/20 ,  H10N50/00

CPC classification number: H10N70/011 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/509 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/67167 ,  H10N50/00 ,  H10N70/231 ,  H10N70/826 ,  H10N70/882

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

公开(公告)号：US11827981B2

公开(公告)日：2023-11-28

申请号：US17498267

申请日：2021-10-11

Applicant: ASM IP Holding B.V.

Inventor： Kentaro Kojima ,  Takeru Kuwano ,  Eiichiro Shiba

IPC: C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  C23C16/56 ,  C23C16/34

CPC classification number: C23C16/509 ,  C23C16/345 ,  C23C16/56 ,  H01J37/32082 ,  H01J2237/3321

Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.

公开(公告)号：US11746420B2

公开(公告)日：2023-09-05

申请号：US16235593

申请日：2018-12-28

Applicant: Novellus Systems, Inc.

Inventor： Pramod Subramonium ,  Joseph L. Womack ,  Dong Niu ,  Keith Fox

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02 ,  H01L21/67 ,  C23C16/52

CPC classification number: C23C16/50 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32137 ,  H01J37/32155 ,  H01L21/022 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.

公开(公告)号：US11725278B2

公开(公告)日：2023-08-15

申请号：US16723643

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo Lin ,  Yi-Hung Lin ,  Jr-Hung Li ,  Tze-Liang Lee ,  Ting-Gang Chen ,  Chung-Ting Ko

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/02274 ,  H01L21/28556

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

公开(公告)号：US20230243036A1

公开(公告)日：2023-08-03

申请号：US18132593

申请日：2023-04-10

Applicant: ASM IP Holding B.V.

Inventor： Marko Tuominen ,  Viljami Pore

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/517 ,  C23C16/56 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/509 ,  C23C16/517 ,  C23C16/56 ,  C23C16/52 ,  C23C16/45536 ,  C23C16/45565

Abstract: Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.