公开(公告)号：US20240363315A1

公开(公告)日：2024-10-31

申请号：US18307931

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Lu LIU ,  Toan Q. TRAN ,  Daniel NGUYEN

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32697 ,  H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/3321 ,  H01J2237/3327

Abstract: Aspects of the present disclosure generally relate to apparatus and methods for an adjustable de-chucking voltage associated with an electrostatically charged substrate in a processing chamber. An example method of de-chucking a substrate disposed in a process chamber includes processing a substrate in a chamber body, the substrate being coupled to a substrate support comprising a chucking electrode. The method further includes monitoring a property associated with a lift pin assembly movable relative to the chucking electrode via an actuator. The method further includes adjusting a first voltage level applied to the chucking electrode in response to the property associated with the lift pin assembly satisfying one or more criteria.

公开(公告)号：US20240355590A1

公开(公告)日：2024-10-24

申请号：US18757613

申请日：2024-06-28

Applicant: Tokyo Electron Limited

Inventor： Takayuki KATSUNUMA ,  Masanobu HONDA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/3321 ,  H01J2237/3346

Abstract: A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.

公开(公告)号：US20240348223A1

公开(公告)日：2024-10-17

申请号：US18757339

申请日：2024-06-27

Applicant: Lam Research Corporation

Inventor： Sunil Kapoor ,  Aaron Logan ,  Hyungjoon Kim ,  Yaswanth Rangineni ,  Karl Leeser

IPC: H03H1/00 ,  H01J37/32 ,  H02M1/44

CPC classification number: H03H1/0007 ,  H01J37/32183 ,  H01J37/32724 ,  H02M1/44 ,  H01J2237/3321

Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.

公开(公告)号：US20240344201A1

公开(公告)日：2024-10-17

申请号：US18580384

申请日：2022-07-15

Applicant: LAM RESEARCH CORPORATION

Inventor： Dong WANG ,  Tu HONG ,  Wenija SHEIN ,  Hu KANG ,  Marc KOLLRACK ,  Sky MULLENAUX

IPC: C23C16/455 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32935 ,  H01J2237/3321

Abstract: A controller for a processing chamber configured to perform a deposition process on a substrate comprises a temperature monitor configured to obtain a temperature of a showerhead of the processing chamber, a deposition time determiner configured to determine an optimized deposition time based on the obtained temperature of the showerhead and data that correlates the temperature of the showerhead with at least one of the optimized deposition time, a deposition thickness, and a deposition rate, and a deposition optimizer configured to perform a deposition step on the substrate based on the determined optimized deposition time.

公开(公告)号：US12116281B2

公开(公告)日：2024-10-15

申请号：US17416525

申请日：2019-12-24

Applicant: NANJING UNIVERSITY

Inventor： Libo Gao ,  Guowen Yuan ,  Jie Xu

IPC: C23C16/50 ,  C01B32/186 ,  C01B32/194 ,  C23C16/26 ,  C23C16/46 ,  C23C16/52 ,  H01J37/32

CPC classification number: C01B32/186 ,  C01B32/194 ,  C23C16/26 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32816 ,  C01P2002/82 ,  H01J2237/3321

Abstract: A method for efficiently eliminating graphene wrinkles formed by chemical vapor deposition includes: directly growing super smooth wrinkle-free graphene films on metal substrates such as copper, nickel and alloys thereof and non-metal substrates such as silicon oxide and silicon carbide, or eliminating the wrinkles of wrinkled graphene through controlled proton injection at a high temperature by precisely controlling the temperature and hydrogen plasma power and time for generating protons; where the plasma-assisted chemical vapor deposition system includes a plasma generator, a vacuum system and a heating system; where the power of the plasma generator is 5 to 1000 W, the pressure of the vacuum system is 10−5 to 105 Pa, and the heating temperature of the system is controllable between 25 to 1000° C.; directly growing a super smooth wrinkle-free graphene by injecting protons on various substrates during growth.

公开(公告)号：US20240331984A1

公开(公告)日：2024-10-03

申请号：US18620464

申请日：2024-03-28

Applicant: ASM IP Holding B.V.

Inventor： Yanfu Lu ,  Alexandros Demos

IPC: H01J37/32 ,  C23C16/24 ,  C23C16/46 ,  H01L21/02

CPC classification number: H01J37/32522 ,  C23C16/24 ,  C23C16/46 ,  H01J37/32357 ,  H01L21/02532 ,  H01L21/0262 ,  H01J2237/3321

Abstract: Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.

公开(公告)号：US20240304453A1

公开(公告)日：2024-09-12

申请号：US18665377

申请日：2024-05-15

Applicant: ULVAC, INC.

Inventor： TAICHI SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC: H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

Abstract: The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOyαz; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

公开(公告)号：US12087561B2

公开(公告)日：2024-09-10

申请号：US18329791

申请日：2023-06-06

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32862 ,  C23C16/0236 ,  C23C16/4405 ,  C23C16/45544 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/67069 ,  H01J37/3211 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/186 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/02164 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20240298555A1

公开(公告)日：2024-09-05

申请号：US18177397

申请日：2023-03-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sheng-Siang Ruan ,  Chia-Wen Zhong ,  Tzu-Yu Lin ,  Yao-Wen Chang ,  Ching Ju Yang ,  Chin I Wang

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/8416 ,  H10N70/023 ,  H10N70/026 ,  H10N70/063 ,  H10N70/245 ,  H10N70/883 ,  H01J37/32091 ,  H01J2237/3321

Abstract: A semiconductor device that includes a semiconductor substrate, a bottom electrode over the semiconductor substrate, a switching layer over the bottom electrode, a metal ion source layer over the switching layer, and a top electrode over the metal ion source layer. The switching layer includes a compound having aluminum, oxygen, and nitrogen.

公开(公告)号：US12074011B2

公开(公告)日：2024-08-27

申请号：US17356998

申请日：2021-06-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiye Kim ,  In Cheol Song ,  Woongpil Jeon ,  Daihong Kim ,  Jaebeom Park ,  Byungho Chun

IPC: H01J37/32 ,  C23C16/505 ,  H05K9/00

CPC classification number: H01J37/32449 ,  C23C16/505 ,  H01J37/32082 ,  H05K9/0081 ,  H01J2237/3321

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.