公开(公告)号：US12243747B2

公开(公告)日：2025-03-04

申请号：US17235985

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50 ,  H01L29/49

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20250166995A1

公开(公告)日：2025-05-22

申请号：US19034986

申请日：2025-01-23

Applicant: ASM IP Holding B.V.

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50 ,  H10D64/66

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US20210335612A1

公开(公告)日：2021-10-28

申请号：US17235985

申请日：2021-04-21

Applicant: ASM IP Holding B.V

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  H01L29/49 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.