公开(公告)号：US20250037995A1

公开(公告)日：2025-01-30

申请号：US18914767

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US12154785B2

公开(公告)日：2024-11-26

申请号：US17814161

申请日：2022-07-21

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20210399111A1

公开(公告)日：2021-12-23

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US12243747B2

公开(公告)日：2025-03-04

申请号：US17235985

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： Petro Deminskyi ,  Charles Dezelah ,  Jiyeon Kim ,  Giuseppe Alessio Verni ,  Maart Van Druenen ,  Qi Xie ,  Petri Räisänen

IPC: H01L21/28 ,  C23C16/38 ,  C23C16/455 ,  C23C16/50 ,  H01L29/49

Abstract: Methods and systems for depositing a layer, comprising one or more of vanadium boride and vanadium phosphide, onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process. The deposition process can include providing a vanadium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. Exemplary structures can include field effect transistor structures, such as gate all around structures. The layer comprising one or more of vanadium boride and vanadium phosphide can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

公开(公告)号：US11430656B2

公开(公告)日：2022-08-30

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US11139383B2

公开(公告)日：2021-10-05

申请号：US16849144

申请日：2020-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20190043962A1

公开(公告)日：2019-02-07

申请号：US15997520

申请日：2018-06-04

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/3205 ,  H01L21/285 ,  C23C16/06 ,  C23C16/34 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US20180151345A1

公开(公告)日：2018-05-31

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C14/08 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/042 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US12237392B2

公开(公告)日：2025-02-25

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US09981286B2

公开(公告)日：2018-05-29

申请号：US15064404

申请日：2016-03-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jacob Huffman Woodruff ,  Michael Eugene Givens ,  Bed Sharma ,  Petri Räisänen

IPC: C23C16/42 ,  B05D1/00

CPC classification number: B05D1/60 ,  B05D2203/30 ,  C23C16/04 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/285

Abstract: Processes are provided for selectively depositing a metal silicide material on a first H-terminated surface of a substrate relative to a second, different surface of the same substrate. In some aspects, methods of forming a metal silicide contact layer for use in integrated circuit fabrication are provided.