公开(公告)号：US11562901B2

公开(公告)日：2023-01-24

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

公开(公告)号：US20210090878A1

公开(公告)日：2021-03-25

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.