公开(公告)号：US11562901B2

公开(公告)日：2023-01-24

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

公开(公告)号：US20230142899A1

公开(公告)日：2023-05-11

申请号：US17979237

申请日：2022-11-02

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  SeokJae Oh ,  HyunGyu Jang ,  HeeSung Kang ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim

IPC: C23C16/505 ,  H01J37/32 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/505 ,  H01J37/32743 ,  H01J37/32449 ,  C23C16/345 ,  C23C16/52 ,  C23C16/45536 ,  H01J2237/3321

Abstract: A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.

公开(公告)号：US20220415650A1

公开(公告)日：2022-12-29

申请号：US17847531

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： JaeOk Ko ,  HeeSung Kang ,  JaeBin Ahn ,  SeokJae Oh ,  WanGyu Lim ,  HyounMo Choi ,  YoungJae Kim ,  Shinya Ueda

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/02 ,  C23C16/505 ,  C23C16/04

Abstract: Provided is a substrate processing method capable of filling a film in a gap structure without forming voids or seams in a gap, the substrate processing method including: a first step of forming a thin film on a structure including a gap by performing a first cycle including supplying a first reaction gas and supplying a second reaction gas to the structure a plurality of times; a second step of etching a portion of the thin film by supplying a fluorine-containing gas onto the thin film; a third step of supplying a hydrogen-containing gas onto the thin film; a fourth step of supplying an inhibiting gas to an upper portion of the gap; and a fifth step of forming a thin film by performing a second cycle including supplying the first reaction gas and supplying a second reaction gas onto the thin film a plurality of times.

公开(公告)号：US20210090878A1

公开(公告)日：2021-03-25

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.