公开(公告)号：US10720322B2

公开(公告)日：2020-07-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US11551925B2

公开(公告)日：2023-01-10

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US20200321209A1

公开(公告)日：2020-10-08

申请号：US16904166

申请日：2020-06-17

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US20200312652A1

公开(公告)日：2020-10-01

申请号：US16828885

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  JinGeun Yu ,  JaeOk Ko ,  YoungHoon Kim

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

公开(公告)号：US11562901B2

公开(公告)日：2023-01-24

申请号：US17023129

申请日：2020-09-16

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang ,  YoonKi Min ,  WanGyu Lim ,  SeokJae Oh ,  SeongIl Cho

IPC: H01L21/02 ,  H01L21/311

Abstract: A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

公开(公告)号：US11530483B2

公开(公告)日：2022-12-20

申请号：US16445096

申请日：2019-06-18

Applicant: ASM IP Holding B.V.

Inventor： YoonKi Min ,  YoungHoon Kim ,  HakJoo Lee ,  SeungJu Chun

IPC: C23C16/46 ,  H01L21/677 ,  C23C16/52 ,  H01L21/67

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

公开(公告)号：US20170250068A1

公开(公告)日：2017-08-31

申请号：US15592730

申请日：2017-05-11

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01J2237/3347 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

公开(公告)号：US20230323534A1

公开(公告)日：2023-10-12

申请号：US18205716

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： DooHyun La ,  HaRim Kim ,  YoonKi Min ,  KyungEun Lee ,  Zhenyu Jin ,  HakJoon Lee

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/34

CPC classification number: C23C16/45536 ,  H01L21/0228 ,  H01J37/32449 ,  H01J37/32082 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02211 ,  H01L21/02164 ,  H01L21/0217 ,  C23C16/4404 ,  C23C16/345 ,  H01J2237/332

Abstract: A substrate processing method capable of forming a film with an improved step coverage and/or improved and/or more uniform properties on a surface of a gap structure having a high aspect ratio is provided. An exemplary substrate processing method includes: providing a gap structure; supplying gas including a source gas onto the gap structure; generating active species from the source gas; generating neutral molecules by neutralizing the active species, and moving the neutral molecules in a direction toward a lower surface of a recess extending between the first stepped portion and the second stepped portion; and exciting the neutral molecules moving in the direction toward the lower surface.

公开(公告)号：US10529554B2

公开(公告)日：2020-01-07

申请号：US15592730

申请日：2017-05-11

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

公开(公告)号：US20190390343A1

公开(公告)日：2019-12-26

申请号：US16445096

申请日：2019-06-18

Applicant: ASM IP Holding B.V.

Inventor： YoonKi Min ,  YoungHoon Kim ,  HakJoo Lee ,  SeungJu Chun

IPC: C23C16/46 ,  H01L21/67 ,  C23C16/52 ,  H01L21/677

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.