公开(公告)号：US10247770B2

公开(公告)日：2019-04-02

申请号：US15381992

申请日：2016-12-16

Applicant: Advanced Micro Devices, Inc.

Inventor： Abhay Deshpande ,  Arun S. Iyer ,  Prasanth K. Vallur ,  Girish Anathahally Singrigowda ,  Stephen V. Kosonocky

IPC: G01R31/26 ,  H03K5/159 ,  H03K3/03

Abstract: Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.

公开(公告)号：US20180172753A1

公开(公告)日：2018-06-21

申请号：US15381992

申请日：2016-12-16

Applicant: Advanced Micro Devices, Inc.

Inventor： Abhay Deshpande ,  Arun S. Iyer ,  Prasanth K. Vallur ,  Girish Anathahally Singrigowda ,  Stephen V. Kosonocky

IPC: G01R31/26 ,  H03K5/159 ,  H03K3/03

CPC classification number: G01R31/2623 ,  H03K3/0315 ,  H03K5/159

Abstract: Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.