公开(公告)号：US11728252B2

公开(公告)日：2023-08-15

申请号：US16846085

申请日：2020-04-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hui Hua Lee ,  Chun Hao Chiu ,  Hui-Ying Hsieh ,  Kuo-Hua Chen ,  Chi-Tsung Chiu

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/16

CPC classification number: H01L23/49575 ,  H01L21/486 ,  H01L21/4857 ,  H01L23/49513 ,  H01L23/49517 ,  H01L23/49811 ,  H01L23/49866 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/00 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2224/24145 ,  H01L2224/24195 ,  H01L2224/24247 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2924/15153 ,  H01L2924/3511 ,  H01L2924/3511 ,  H01L2924/00

Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

公开(公告)号：US10707157B2

公开(公告)日：2020-07-07

申请号：US15621970

申请日：2017-06-13

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hui Hua Lee ,  Chun Hao Chiu ,  Hui-Ying Hsieh ,  Kuo-Hua Chen ,  Chi-Tsung Chiu

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L25/16 ,  H01L25/065

Abstract: A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.

公开(公告)号：US12033923B2

公开(公告)日：2024-07-09

申请号：US17023267

申请日：2020-09-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chi-Tsung Chiu ,  Hui-Ying Hsieh ,  Chun Hao Chiu ,  Chiuan-You Ding

IPC: H01L23/495

CPC classification number: H01L23/49558 ,  H01L23/49503 ,  H01L23/49527 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49582 ,  H01L2224/023 ,  H01L2924/19011

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a lead frame and passive component. The lead frame includes a paddle and a plurality of leads. The lead frame includes a first surface and a second surface opposite to the first surface. The passive component includes an external connector. A pattern of the external connector is corresponding to a pattern of the plurality of leads of the lead frame.