DEVICE FOR THERMAL CONDUCTION AND ELECTRICAL ISOLATION

    公开(公告)号:US20240121895A1

    公开(公告)日:2024-04-11

    申请号:US18388737

    申请日:2023-11-10

    Inventor: Jason Schmitt

    Abstract: The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AlON), aluminum oxyhydronitride (AlHON), aluminum oxycarbonitride (AlCON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AlSi, C—Al, W—Cu, or Ti.

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