METHOD OF PROCESSING A SEMICONDUCTOR WAFER

    公开(公告)号:US20210151342A1

    公开(公告)日:2021-05-20

    申请号:US16685900

    申请日:2019-11-15

    Abstract: A method of processing a semiconductor wafer is provided. The method includes providing a semiconductor wafer having a front side and a back side, the semiconductor wafer provided with a circuit layer at the front side and a patterned surface at the back side, forming a sacrificial layer on the back side, mounting a tape on the sacrificial layer, the sacrificial layer isolating the patterned surface from the tape, wherein adhesion strength between the sacrificial layer and the patterned surface is larger than that between the sacrificial layer and the tape, dicing the semiconductor wafer at the back side through the tape, defining individual chips on the semiconductor wafer, and expanding the tape to separate the chips from each other.

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