公开(公告)号：US20220243992A1

公开(公告)日：2022-08-04

申请号：US17163217

申请日：2021-01-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hung-Hsien HUANG ,  Shin-Luh TARNG ,  Ian HU ,  Chien-Neng LIAO ,  Jui-Cheng YU ,  Po-Cheng HUANG

IPC: F28D15/04 ,  F28D15/02 ,  F28F13/18

Abstract: A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.