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公开(公告)号:US20210082782A1
公开(公告)日:2021-03-18
申请号:US16572340
申请日:2019-09-16
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Han WANG , Ian HU
IPC: H01L23/31 , H01L25/065 , H01L23/00 , H01L21/56 , H01L23/48
Abstract: A semiconductor device package includes a first substrate, a second substrate, and a first electronic component between the first substrate and the second substrate. The first electronic component has a first surface facing the first substrate and a second surface facing the second substrate. The semiconductor device package also includes a first electrical contact disposed on the first surface of the first electronic component and electrically connecting the first surface of the first electronic component with the first substrate. The semiconductor device package also includes a second electrical contact disposed on the second surface of the first electronic component and electrically connecting the second surface of the first electronic component with the second substrate. A method of manufacturing a semiconductor device package is also disclosed.
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公开(公告)号:US20210166987A1
公开(公告)日:2021-06-03
申请号:US17174209
申请日:2021-02-11
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ian HU , Cheng-Yu TSAI
IPC: H01L23/367 , H01L23/538 , H01L25/16 , H01L23/31 , H01L23/00 , H01L21/56
Abstract: A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.
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公开(公告)号:US20210134696A1
公开(公告)日:2021-05-06
申请号:US16676284
申请日:2019-11-06
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ian HU , Meng-Kai SHIH , Chih-Pin HUNG
IPC: H01L23/367 , H01L23/13 , H01L23/427 , H01L23/00
Abstract: A semiconductor device package includes a substrate, an electronic component disposed on the substrate, a supporting structure disposed on the substrate and surrounding the electronic component, and a heat spreading structure disposed on the supporting structure. A length of the supporting structure and a length of the heat spreading structure are greater than a length of the substrate.
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公开(公告)号:US20200266123A1
公开(公告)日:2020-08-20
申请号:US16717929
申请日:2019-12-17
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsin-En CHEN , Ian HU , Jung-Che TSAI
IPC: H01L23/427 , H01L23/46 , H01L23/48
Abstract: A semiconductor package structure includes a package substrate and a semiconductor die. The package substrate includes a plurality of hollow vias extending through the package substrate. The semiconductor die is electrically connected to the package substrate. The hollow vias are disposed under the semiconductor die.
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公开(公告)号:US20200091036A1
公开(公告)日:2020-03-19
申请号:US16566495
申请日:2019-09-10
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hsin-En CHEN , Ian HU , Jin-Feng YANG
IPC: H01L23/427 , H01L23/00
Abstract: A semiconductor package structure includes a package substrate, a semiconductor die, a vapor chamber and a heat dissipating device. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is electrically connected to the first surface of the package substrate. The vapor chamber is thermally connected to a first surface of the semiconductor die. The vapor chamber defines an enclosed chamber for accommodating a first working liquid. The heat dissipating device is thermally connected to the vapor chamber. The heat dissipating device defines a substantially enclosed space for accommodating a second working liquid.
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公开(公告)号:US20240186201A1
公开(公告)日:2024-06-06
申请号:US18440919
申请日:2024-02-13
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Han WANG , Ian HU
IPC: H01L23/31 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/48 , H01L25/065 , H01L25/10
CPC classification number: H01L23/3128 , H01L21/565 , H01L21/6835 , H01L23/3135 , H01L23/481 , H01L24/09 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2224/02372 , H01L2225/0651 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2225/107
Abstract: A semiconductor device package includes a first substrate, a second substrate, and a first electronic component between the first substrate and the second substrate. The first electronic component has a first surface facing the first substrate and a second surface facing the second substrate. The semiconductor device package also includes a first electrical contact disposed on the first surface of the first electronic component and electrically connecting the first surface of the first electronic component with the first substrate. The semiconductor device package also includes a second electrical contact disposed on the second surface of the first electronic component and electrically connecting the second surface of the first electronic component with the second substrate. A method of manufacturing a semiconductor device package is also disclosed.
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公开(公告)号:US20220243992A1
公开(公告)日:2022-08-04
申请号:US17163217
申请日:2021-01-29
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Hung-Hsien HUANG , Shin-Luh TARNG , Ian HU , Chien-Neng LIAO , Jui-Cheng YU , Po-Cheng HUANG
Abstract: A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.
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公开(公告)号:US20200275030A1
公开(公告)日:2020-08-27
申请号:US16285000
申请日:2019-02-25
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Ming-Han WANG , Ian HU , Meng-Kai SHIH , Hsuan Yu CHEN
Abstract: An optical measurement equipment includes an adjustment apparatus and at least two image capturing devices. The image capturing devices have a depth-of-field and attached to the adjustment apparatus. The image capturing devices are adjusted by the adjustment apparatus such that a portion to be measured of a workpiece is located within the depth-of-field of the image capturing devices.
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公开(公告)号:US20200098605A1
公开(公告)日:2020-03-26
申请号:US16138938
申请日:2018-09-21
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Chun Hung TSAI , Hsuan Yu CHEN , Ian HU , Meng-Kai SHIH , Shin-Luh TARNG
IPC: H01L21/67 , G01N21/95 , G01N21/956 , G01B11/25 , G06T7/00
Abstract: An apparatus includes: a first image capture module, a second image capture module, and a first projector. The first image capture module has a first optical axis forming an angle from approximately 70° to approximately 87° with respect to the surface of a carrier. The second image capture module has a first optical axis forming an angle of approximately 90° with respect to the surface of the carrier. The first projector has a first optical axis forming an angle from approximately 40° to approximately 85° with respect to the surface of the carrier.
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公开(公告)号:US20190080975A1
公开(公告)日:2019-03-14
申请号:US15701394
申请日:2017-09-11
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Wei-Hsuan LEE , Sung-Mao LI , Ming-Han WANG , Ian HU
Abstract: A semiconductor device package includes a semiconductor device, a conductive bump, a first encapsulant and a second encapsulant. The semiconductor device has a first surface, a second surface and a lateral surface. The second surface is opposite to the first surface. The lateral surface extends between the first surface and the second surface. The semiconductor device comprises a conductive pad adjacent to the first surface of the semiconductor device. The conductive bump is electrically connected to the conductive pad. The first encapsulant covers the first surface of the semiconductor device and a first portion of the lateral surface of the semiconductor device, and surrounds the conductive bump. The second encapsulant covers the second surface of the semiconductor device and a second portion of the lateral surface of the semiconductor device.
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