公开(公告)号：US20140374850A1

公开(公告)日：2014-12-25

申请号：US13926384

申请日：2013-06-25

Applicant: Analog Devices, Inc.

Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang ,  Jeffrey Gregory

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0029 ,  B81C1/00238 ,  B81C1/00349 ,  H01L21/02126 ,  H01L25/0657 ,  H01L2224/81801 ,  H01L2924/10253 ,  H01L2924/1461

Abstract: One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate.

Abstract translation: 在标准ASIC晶片顶部金属层中形成一个或多个导电屏蔽板，例如，当MEMS器件直接由该芯片封装时，用于阻止从MEMS晶片上的MEMS器件结构到ASIC晶片上的电路的串扰 ASIC晶圆采用晶圆级芯片级封装。 一般来说，屏蔽板应至少稍微大于被屏蔽的MEMS器件结构（例如，可移动MEMS结构，例如加速度计质量块或陀螺仪谐振器），并且屏蔽板不能与MEMS接触 晶片接合期间或之后的器件结构。 因此，形成凹部以确保离开MEMS器件结构的顶表面有足够的空腔。 屏蔽板是导电的，并且可以被偏置，例如与相对的MEMS器件结构相同的电压，以便在MEMS器件结构和屏蔽板之间维持零静电吸引力。