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1.发明授权公开(公告)号：US10081535B2
公开(公告)日：2018-09-25
申请号：US13926384
申请日：2013-06-25
Applicant: Analog Devices, Inc.
Inventor： Li Chen , Thomas Kieran Nunan , Kuang L. Yang , Jeffrey A. Gregory
IPC: B81B7/00 , B81C1/00 , H01L21/02 , H01L25/065
CPC classification number: B81B7/0029 , B81C1/00238 , B81C1/00349 , H01L21/02126 , H01L25/0657 , H01L2224/81801 , H01L2924/10253 , H01L2924/1461
Abstract: One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate.
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公开(公告)号：US09601278B2
公开(公告)日：2017-03-21
申请号：US14492376
申请日：2014-09-22
Applicant: Analog Devices, Inc.
Inventor： Yingqi Jiang , Kuang L. Yang
Abstract: A method of producing a super-capacitor provides a first substrate having a first base, forms a first electrode on the first substrate, and forms a separator so that the electrode is between the first base and the first separator. The method also micromachines holes through the separator, forms a chamber, and adds electrolyte, having ions, to the chamber. The electrolyte is in contact with the first electrode within the chamber. In addition, the holes are sized to permit transmission of the ions of the electrolyte through the holes.
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3.发明授权Apparatus and method for preventing stiction of MEMS devices encapsulated by active circuitry 有权用于防止由有源电路封装的MEMS器件的静电的装置和方法公开(公告)号：US09556017B2
公开(公告)日：2017-01-31
申请号：US13926257
申请日：2013-06-25
Applicant: Analog Devices, Inc.
Inventor： Li Chen , Thomas Kieran Nunan , Kuang L. Yang
CPC classification number: B81B3/0051 , B81B3/0005 , B81B3/0059 , B81B2207/012 , B81C1/00976 , B81C2201/112 , B81C2203/0118
Abstract: One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features.
Abstract translation: 在标准ASIC晶片顶部钝化层中形成一个或多个塞子特征（例如，凸起结构），用于在具有由ASIC晶片直接覆盖的MEMS器件的集成器件中垂直地防止MEMS器件静电。 TiN涂层可用于阻塞特征以用于抗静电。 可以将电势施加到一个或多个塞子特征的TiN抗静电涂层。
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公开(公告)号：US20150097253A1
公开(公告)日：2015-04-09
申请号：US14045855
申请日：2013-10-04
Applicant: Analog Devices, Inc.
Inventor： Christine H. Tsau , Li Chen , Kuang L. Yang
CPC classification number: B81B7/0038 , B81B2201/0235 , B81B2201/0242 , G01P1/023 , G01P15/0802 , H01L29/84
Abstract: A MEMS apparatus has a substrate, a cap forming first and second chambers with the base, and movable microstructure within the first and second chambers. To control pressures, the MEMS apparatus also has a first outgas structure within the first chamber. The first outgas structure produces a first pressure within the first chamber, which is isolated from the second chamber, which, like the first chamber, has a second pressure. The first pressure is different from that in the second pressure (e.g., a higher pressure or lower pressure).
Abstract translation: MEMS装置具有基板，形成具有基座的第一和第二室的盖以及第一和第二室内的可移动微结构。 为了控制压力，MEMS装置还在第一室内具有第一排气结构。 第一排气结构在第一室内产生第一压力，该第一压力与第二室隔离，其与第一室相似，具有第二压力。 第一压力与第二压力（例如，较高压力或更低压力）不同。
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公开(公告)号：US08921128B2
公开(公告)日：2014-12-30
申请号：US13904681
申请日：2013-05-29
Applicant: Analog Devices, Inc.
Inventor： Li Chen , Kuang L. Yang
CPC classification number: B81C99/0045
Abstract: Manufactured capped MEMS device wafers are tested for hermeticity on a vacuum prober at differing pressures or on a wafer prober at differing temperatures. Resonant frequency testing is conducted. Leaking MEMS devices are distinguished from the remaining MEMS devices on the basis of quality factor (“Q”) measurements obtained from the resonant frequency testing.
Abstract translation: 在不同压力下或在不同温度下的晶圆探测器上对制造的封装的MEMS器件晶片进行真空探测器的气密性测试。 进行谐振频率测试。 基于从谐振频率测试获得的品质因数（“Q”）测量，泄漏的MEMS器件与剩余的MEMS器件不同。
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Patent Agency Ranking
公开(公告)号：US20140356989A1
公开(公告)日：2014-12-04
申请号：US13904681
申请日：2013-05-29
Applicant: Analog Devices, Inc.
Inventor： Li Chen , Kuang L. Yang
CPC classification number: B81C99/0045
Abstract: Manufactured capped MEMS device wafers are tested for hermeticity on a vacuum prober at differing pressures or on a wafer prober at differing temperatures. Resonant frequency testing is conducted. Leaking MEMS devices are distinguished from the remaining MEMS devices on the basis of quality factor (“Q”) measurements obtained from the resonant frequency testing.
Abstract translation: 在不同压力下或在不同温度下的晶圆探测器上对制造的封装的MEMS器件晶片进行真空探测器的气密性测试。 进行谐振频率测试。 基于从谐振频率测试获得的品质因数（“Q”）测量，泄漏的MEMS器件与剩余的MEMS器件不同。
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7.发明申请公开(公告)号：US20140131850A1
公开(公告)日：2014-05-15
申请号：US13673124
申请日：2012-11-09
Applicant: ANALOG DEVICES, INC.
Inventor： Li Chen , Thomas Kieran Nunan , Kuang L. Yang
CPC classification number: B81C3/001 , B81B7/007 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/035
Abstract: A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.
Abstract translation: 微芯片具有基底裸片，其具有导电互连和围绕导电互连的至少一部分的隔离沟槽，以及固定到基模的帽模。 由金属材料形成的密封件位于基模和盖模之间，以将它们固定在一起。 微芯片还具有在隔离沟槽和金属密封件之间的阻挡装置，至少部分地防止金属材料与互连件接触。
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公开(公告)号：US20170237368A1
公开(公告)日：2017-08-17
申请号：US15042432
申请日：2016-02-12
Applicant: ANALOG DEVICES, INC.
Inventor： Qian Zhang , Yingqi Jiang , Kuang L. Yang
Abstract: An exemplary energy harvester includes a piezoelectric diaphragm, an eccentric mass that rotates in response to external motion, and a piezoelectric stress inducer coupled with the eccentric mass and the piezoelectric diaphragm. The piezoelectric stress inducer deforms the piezoelectric diaphragm in response to rotational motion of the eccentric mass, causing the piezoelectric diaphragm to generate electrical energy.
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公开(公告)号：US20160064155A1
公开(公告)日：2016-03-03
申请号：US14492376
申请日：2014-09-22
Applicant: Analog Devices, Inc.
Inventor： Yingqi Jiang , Kuang L. Yang
Abstract: A method of producing a super-capacitor provides a first substrate having a first base, forms a first electrode on the first substrate, and forms a separator so that the electrode is between the first base and the first separator. The method also micromachines holes through the separator, forms a chamber, and adds electrolyte, having ions, to the chamber. The electrolyte is in contact with the first electrode within the chamber. In addition, the holes are sized to permit transmission of the ions of the electrolyte through the holes.
Abstract translation: 制造超级电容器的方法提供了具有第一基底的第一基底，在第一基底上形成第一电极，并形成隔膜，使得电极位于第一基底和第一隔膜之间。 该方法还通过隔离器微孔加工孔，形成室，并将具有离子的电解质加入到室中。 电解质与室内的第一电极接触。 此外，这些孔的大小可以允许电解质的离子通过孔传播。
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公开(公告)号：US09242856B2
公开(公告)日：2016-01-26
申请号：US14224107
申请日：2014-03-25
Applicant: Analog Devices, Inc.
Inventor： Li Chen , Thomas Kieran Nunan , Kuang L. Yang
CPC classification number: B81C3/001 , B81B7/007 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/035
Abstract: A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.
Abstract translation: 微芯片具有基底裸片，其具有导电互连和围绕导电互连的至少一部分的隔离沟槽，以及固定到基模的帽模。 由金属材料形成的密封件位于基模和盖模之间，以将它们固定在一起。 微芯片还具有在隔离沟槽和金属密封件之间的阻挡装置，至少部分地防止金属材料与互连件接触。
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