公开(公告)号：US20150158114A1

公开(公告)日：2015-06-11

申请号：US14102132

申请日：2013-12-10

Applicant: Analog Devices Technology

Inventor： Bernard Patrick Stenson ,  Paul Martin Lambkin ,  Colette J. Blaney ,  John Beatty

IPC: B23K26/00 ,  H01L27/01

CPC classification number: H01G4/33 ,  H01C7/006 ,  H01C17/242 ,  H01G4/255

Abstract: A phase corrector for laser trimming a component, the phase corrector comprising: a first correction structure located to a first side of the component, the first correction structure comprising first and second correction regions at first and second distances from the component; and a second correction structure located to a second side the component, the second correction structure comprising third and fourth correction regions at third and fourth distances from the component.

Abstract translation: 一种用于激光微调分量的相位校正器，所述相位校正器包括：位于所述分量的第一侧的第一校正结构，所述第一校正结构包括距离所述分量的第一和第二距离处的第一和第二校正区域; 以及位于所述部件的第二侧的第二校正结构，所述第二校正结构包括距所述部件的第三和第四距离处的第三和第四校正区域。

公开(公告)号：US20150170911A1

公开(公告)日：2015-06-18

申请号：US14108035

申请日：2013-12-16

Applicant: ANALOG DEVICES TECHNOLOGY

Inventor： Paul Martin Lambkin ,  Padraig L. Fitzgerald ,  Bernard Patrick Stenson ,  Raymond C. Goggin ,  Seamus A. Lynch ,  William A. Lane

IPC: H01L21/02

CPC classification number: H01L21/02524 ,  H01H59/0009 ,  H01H2059/0018 ,  H01L21/02002 ,  H01L21/02373 ,  H01L21/322

Abstract: A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.

Abstract translation: 提供硅衬底，其可以通过使用由Czochralski工艺形成的硅层并且具有沉积在硅层上的载流子寿命消除层，更便宜地形成RF部件。