公开(公告)号：US09292381B2

公开(公告)日：2016-03-22

申请号：US14090431

申请日：2013-11-26

Applicant: Apple Inc.

Inventor： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC: G06F11/10 ,  G11C16/26

CPC classification number: G06F11/1068 ,  G06F11/1016 ,  G11C16/26

Abstract: A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

公开(公告)号：US20140233310A1

公开(公告)日：2014-08-21

申请号：US14259317

申请日：2014-04-23

Applicant: Apple Inc.

Inventor： Ariel Maislos

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C27/005

Abstract: A method includes storing data in an analog memory cell by writing an analog value into the memory cell. After storing the data, the data stored in the memory cell is read by discharging electrical current to flow through the memory cell, during a predefined time interval, while applying a variable voltage to a gate of the memory cell. A fraction of the predefined time interval, during which the variable voltage allows the electrical current to flow through the memory cell, is estimated. The stored data is estimated based on the estimated fraction.

Abstract translation: 一种方法包括通过将模拟值写入存储单元来将数据存储在模拟存储单元中。 在存储数据之后，在预定义的时间间隔期间，通过放电电流流过存储器单元，同时向存储器单元的栅极施加可变电压来读取存储在存储单元中的数据。 估计可变电压允许电流流经存储器单元的预定时间间隔的一部分。 存储的数据基于估计的分数来估计。

公开(公告)号：US09230672B2

公开(公告)日：2016-01-05

申请号：US14259317

申请日：2014-04-23

Applicant: Apple Inc.

Inventor： Ariel Maislos

IPC: G11C16/04 ,  G11C16/26 ,  G11C27/00

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C27/005

Abstract: A method includes storing data in an analog memory cell by writing an analog value into the memory cell. After storing the data, the data stored in the memory cell is read by discharging electrical current to flow through the memory cell, during a predefined time interval, while applying a variable voltage to a gate of the memory cell. A fraction of the predefined time interval, during which the variable voltage allows the electrical current to flow through the memory cell, is estimated. The stored data is estimated based on the estimated fraction.

Abstract translation: 一种方法包括通过将模拟值写入存储单元来将数据存储在模拟存储单元中。 在存储数据之后，在预定义的时间间隔期间，通过放电电流流过存储器单元，同时向存储器单元的栅极施加可变电压来读取存储在存储单元中的数据。 估计可变电压允许电流流经存储器单元的预定时间间隔的一部分。 存储的数据基于估计的分数来估计。

公开(公告)号：US20140157084A1

公开(公告)日：2014-06-05

申请号：US14090431

申请日：2013-11-26

Applicant: Apple Inc.

Inventor： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC: G06F11/10

CPC classification number: G06F11/1068 ,  G06F11/1016 ,  G11C16/26

Abstract: A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

Abstract translation: 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。