Image Sensor Architectures that Employ Multi-Potential Dynamic Substrate Biasing

    公开(公告)号:US20250048752A1

    公开(公告)日:2025-02-06

    申请号:US18228534

    申请日:2023-07-31

    Applicant: Apple Inc.

    Abstract: An image sensor includes a semiconductor substrate. The semiconductor substrate includes a set of one or more substrate portions. Each substrate portion of the set of one or more substrate portions is electrically isolated from other substrate portions of the set of substrate portions. The image sensor further includes a set of photodiodes, a set of charge storage nodes, a set of charge transfer gates, and a control circuit. Each charge transfer gate of the set of charge transfer gates is disposed on and biased by a different substrate portion of the set of substrate portions. Each charge transfer gate of the set of charge transfer gates is operable to selectively connect a respective photodiode of the set of photodiodes to the charge storage node. The control circuit is operable to dynamically bias each substrate portion of the set of substrate portions independently of each other substrate portion of the set of substrate portions.

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