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公开(公告)号:US20240079440A1
公开(公告)日:2024-03-07
申请号:US17903067
申请日:2022-09-06
申请人: Apple Inc.
发明人: Oray O. Cellek , Fei Tan , Gershon Rosenblum , Hong Wei Lee , Cheng-Ying Tsai , Jae Y. Park , Christophe Verove , John L Orlowski , Siddharth Joshi , Xiangli Li , David Coulon , Xiaofeng Fan , Keith Lyon , Nicolas Hotellier , Arnaud Laflaquière
IPC分类号: H01L27/146 , H04N5/378
CPC分类号: H01L27/14652 , H01L27/14621 , H01L27/14636 , H01L27/1465 , H04N5/378
摘要: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.
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公开(公告)号:US20200304743A1
公开(公告)日:2020-09-24
申请号:US16607113
申请日:2018-04-02
申请人: APPLE INC.
发明人: Gennadiy A Agranov , Oray O. Cellek , QingFei Chen , Xiangli Li
IPC分类号: H04N5/378 , H01L27/146 , H04N5/363
摘要: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.
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公开(公告)号:US20240107782A1
公开(公告)日:2024-03-28
申请号:US17950325
申请日:2022-09-22
申请人: Apple Inc.
发明人: Hong Wei Lee , Oray O. Cellek
CPC分类号: H01L27/286 , G01J5/10 , H01L27/14607 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L27/1469 , H01L27/307 , H04N5/379 , H04N9/04553 , G01J2005/0077
摘要: A sensor module includes a silicon substrate. A set of isolation walls defines, in the silicon substrate, an array of silicon-based image sensor pixels and an array of cavities. An infrared (IR)-sensitive material in the array of cavities forms an array of IR sensor pixels in a same focal plane as the array of silicon-based image sensor pixels.
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4.
公开(公告)号:US11877071B1
公开(公告)日:2024-01-16
申请号:US17951060
申请日:2022-09-22
申请人: Apple Inc.
发明人: John L. Orlowski , Ritu Raj Singh , Oray O. Cellek
IPC分类号: H04N23/745 , H04N25/62 , H04N25/77 , H04N25/78 , G03B13/20
CPC分类号: H04N23/745 , H04N25/62 , H04N25/77 , H04N25/78
摘要: Disclosed herein are cameras and image sensors, and electronic devices containing them, having pixel arrays operable both for obtaining images and detecting flicker in ambient light. For flicker detection, such as prior to image capture, light-generated current from a set of pixels of the pixel array is received at a transimpedance amplifier (TIA) that is formed in a common semiconductor substrate with the pixel array. An output signal of the TIA is digitized and signal processed to detect the flicker in the ambient light. Also disclosed are image sensors having pixel arrays with an embedded modulated light source. The modulated light source may be used for proximity detection, either by time-of-flight or intensity variation of reflected light.
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公开(公告)号:US11239267B2
公开(公告)日:2022-02-01
申请号:US16607113
申请日:2018-04-02
申请人: APPLE INC.
发明人: Gennadiy A Agranov , Oray O. Cellek , QingFei Chen , Xiangli Li
IPC分类号: H01L27/146 , H04N5/378 , H04N5/3745 , H04N5/359 , H04N5/363
摘要: Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.
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6.
公开(公告)号:US20220320174A1
公开(公告)日:2022-10-06
申请号:US17707495
申请日:2022-03-29
申请人: Apple Inc.
发明人: Dajiang Yang , Hong Wei Lee , Xiaofeng Fan , Oray O. Cellek , Xiangli Li , Kai Shen
IPC分类号: H01L27/146 , G02B3/00 , H04N5/3745 , H04N5/353 , H04N5/33
摘要: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.
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公开(公告)号:US10192911B2
公开(公告)日:2019-01-29
申请号:US15939347
申请日:2018-03-29
申请人: APPLE INC.
发明人: Gennadiy A. Agranov , QingFei Chen , Oray O. Cellek , Xiangli Li
IPC分类号: H04N5/378 , H01L27/146
摘要: Imaging apparatus includes a photosensitive medium and a bias electrode, which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits is formed on a semiconductor substrate. Each pixel circuit includes a pixel electrode coupled to collect the charge carriers from the photosensitive medium; a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate coupled between the pixel electrode and the readout circuit; and a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.
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公开(公告)号:US20180331138A1
公开(公告)日:2018-11-15
申请号:US15939347
申请日:2018-03-29
申请人: APPLE INC.
发明人: Gennadiy A. Agranov , QingFei Chen , Oray O. Cellek , Xiangli Li
IPC分类号: H01L27/146 , H04N5/378
CPC分类号: H01L27/14603 , H01L27/14636 , H04N5/3597 , H04N5/3745 , H04N5/378
摘要: Imaging apparatus includes a photosensitive medium and a bias electrode, which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits is formed on a semiconductor substrate. Each pixel circuit includes a pixel electrode coupled to collect the charge carriers from the photosensitive medium; a readout circuit configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate coupled between the pixel electrode and the readout circuit; and a shutter gate coupled in parallel with the skimming gate between a node in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.
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