公开(公告)号：US20230282449A1

公开(公告)日：2023-09-07

申请号：US17686200

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Peter F. Kurunczi ,  Alan V. Hayes

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3244

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

公开(公告)号：US12249488B2

公开(公告)日：2025-03-11

申请号：US17686200

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Peter F. Kurunczi ,  Alan V. Hayes

IPC: H01J37/32

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

公开(公告)号：US12125680B2

公开(公告)日：2024-10-22

申请号：US17512310

申请日：2021-10-27

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Alan V. Hayes ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32339 ,  H01J2237/083

Abstract: An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.

公开(公告)号：US20230125435A1

公开(公告)日：2023-04-27

申请号：US17512310

申请日：2021-10-27

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Alan V. Hayes ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.