公开(公告)号：US12249488B2

公开(公告)日：2025-03-11

申请号：US17686200

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Peter F. Kurunczi ,  Alan V. Hayes

IPC: H01J37/32

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

公开(公告)号：US20230131410A1

公开(公告)日：2023-04-27

申请号：US17510996

申请日：2021-10-26

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  Sudhakar Mahalingam ,  Nevin Clay

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/05

Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

公开(公告)号：US20230083497A1

公开(公告)日：2023-03-16

申请号：US17476200

申请日：2021-09-15

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Peter F. Kurunczi ,  Ernest E. Allen

IPC: H01J37/32

Abstract: An ion source. The ion source may include a plasma chamber to house a plasma, and an extraction assembly, disposed along a side of the plasma chamber, and comprising at least one extraction aperture. The ion source may further include an antenna assembly, extending through the plasma chamber, along a first axis. The antenna assembly may include a dielectric enclosure, a plurality of conductive antennae, extending along the first axis within the dielectric enclosure.

公开(公告)号：US20210090845A1

公开(公告)日：2021-03-25

申请号：US16575969

申请日：2019-09-19

Applicant: APPLIED Materials, Inc.

Inventor： Robert C. Lindberg ,  Alexandre Likhanskii ,  Wayne LeBlanc ,  Frank Sinclair ,  Svetlana Radovanov

IPC: H01J37/12 ,  H01J37/147 ,  H01J37/24 ,  H01J37/317

Abstract: Provided herein are approaches for controlling an ion beam using an electrostatic filter with curved electrodes. In some embodiments, a system may include an electrostatic filter receiving an ion beam, the filter including first and second electrodes disposed opposite sides of an ion beam line, each of the first and second electrodes having a central region between first and second ends, wherein a distance between a first outer surface of the first electrode and a second outer surface of the second electrode varies along an electrode length axis extending between the first and second ends. The system may further include a power supply in communication with the electrostatic filter, the power supply operable to supply a voltage and a current to the first and second electrodes, wherein the variable distance between the first and second outer surfaces causes the ion beam to converge or diverge.

公开(公告)号：US10804068B2

公开(公告)日：2020-10-13

申请号：US16197242

申请日：2018-11-20

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

Abstract: An apparatus is provided. The apparatus may include a main chamber; an entrance tunnel having a propagation axis extending into the main chamber along a first direction; an exit tunnel, connected to the main chamber and defining an exit direction. The entrance tunnel and the exit tunnel may define a beam bend of at least 30 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit aperture, wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes.

公开(公告)号：US20200161076A1

公开(公告)日：2020-05-21

申请号：US16197242

申请日：2018-11-20

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

Abstract: An apparatus is provided. The apparatus may include a main chamber; an entrance tunnel having a propagation axis extending into the main chamber along a first direction; an exit tunnel, connected to the main chamber and defining an exit direction. The entrance tunnel and the exit tunnel may define a beam bend of at least 30 degrees therebetween. The apparatus may include an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit aperture, wherein the electrode assembly comprises a lower electrode, disposed on a first side of the beam path, and a plurality of electrodes, disposed on a second side of the beam path, the plurality of electrodes comprising at least five electrodes.

公开(公告)号：US12154753B2

公开(公告)日：2024-11-26

申请号：US17473101

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Jay T. Scheuer ,  Graham Wright ,  Peter F. Kurunczi ,  Alexandre Likhanskii

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

公开(公告)号：US20230282449A1

公开(公告)日：2023-09-07

申请号：US17686200

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Peter F. Kurunczi ,  Alan V. Hayes

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3244

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

公开(公告)号：US11651932B1

公开(公告)日：2023-05-16

申请号：US17510996

申请日：2021-10-26

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Jay T. Scheuer ,  Sudhakar Mahalingam ,  Nevin Clay

IPC: H01J37/08 ,  H01J37/05 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/05 ,  H01J37/3171

Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

公开(公告)号：US20230080083A1

公开(公告)日：2023-03-16

申请号：US17473096

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Alexander S. Perel ,  Jay T. Scheuer ,  Bon-Woong Koo ,  Robert C. Lindberg ,  Peter F. Kurunczi ,  Graham Wright

IPC: H01J27/02 ,  H01J37/08

Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.