公开(公告)号：US12125664B2

公开(公告)日：2024-10-22

申请号：US17575429

申请日：2022-01-13

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： David Pearson ,  Sebastien Pochon ,  Joao Ferreira

IPC: H01J37/08 ,  H01J27/02 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/32422 ,  H01J2237/083 ,  H01J2237/334

Abstract: A charged particle beam source for a surface processing apparatus is disclosed. The charged particle beam source comprises: a plasma chamber; a plasma generation unit adapted to convert an input gas within the plasma chamber into a plasma containing charged particles; and a grid assembly adjacent an opening of the plasma chamber. The grid assembly comprises one or more grids each having a plurality of apertures therethrough, the one or more grids being electrically biased in use so as to accelerate charged particles from the plasma through the grid(s) to thereby output a charged particle beam, the major axis of which is substantially perpendicular to the plane of the grid assembly. The transmissivity of the or each grid to the charged particles is defined by the relative proportion of aperture area to non-aperture area, and at least one of the grids has a transmissivity which varies across the grid along a first direction, the transmissivity being lower adjacent a first extremity of the grid than adjacent a second extremity of the grid opposite the first extremity, the first direction lying parallel to the plane of the grid assembly, such that in use the charged particle beam output by the source has a non-uniform charged particle current density profile in a plane parallel to the plane of the grid assembly which varies along the first direction, the charged particle current density being lower adjacent a first edge of the beam than adjacent a second edge of the beam opposite the first edge.

公开(公告)号：US12080515B2

公开(公告)日：2024-09-03

申请号：US17718225

申请日：2022-04-11

Applicant: ASML Netherlands B.V.

Inventor： Weiming Ren ,  Xuedong Liu ,  Xuerang Hu ,  Zong-wei Chen

IPC: H01J37/28 ,  H01J37/06 ,  H01J37/10 ,  H01J37/147

CPC classification number: H01J37/28 ,  H01J37/06 ,  H01J37/10 ,  H01J37/1474 ,  H01J2237/0492 ,  H01J2237/083 ,  H01J2237/1501 ,  H01J2237/2806

Abstract: Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator.

公开(公告)号：US11955309B2

公开(公告)日：2024-04-09

申请号：US17369077

申请日：2021-07-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zheng-Yang Li ,  Chian-Chen Kuo ,  Yi-Cheng Lu ,  Ji-Fu Kung

IPC: H01L21/00 ,  H01J27/18 ,  H01J37/08 ,  H01J37/302 ,  H01J37/305 ,  H01L21/67

CPC classification number: H01J37/08 ,  H01J27/18 ,  H01J37/302 ,  H01J37/3053 ,  H01L21/67 ,  H01L21/67069 ,  H01J2237/083

Abstract: An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

公开(公告)号：US20190057833A1

公开(公告)日：2019-02-21

申请号：US16042871

申请日：2018-07-23

Applicant: Hermes Microvision, Inc.

Inventor： Shuai LI

IPC: H01J37/143 ,  H01J37/28 ,  H01J37/09 ,  H01J3/20 ,  H01J37/065 ,  H01J37/14 ,  H01J37/063

CPC classification number: H01J37/143 ,  H01J3/20 ,  H01J37/063 ,  H01J37/065 ,  H01J37/09 ,  H01J37/14 ,  H01J37/28 ,  H01J2237/0453 ,  H01J2237/063 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/0653 ,  H01J2237/083 ,  H01J2237/141 ,  H01J2237/1415 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: This invention provides a charged particle source, which comprises an emitter and means fo generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

公开(公告)号：US09870893B2

公开(公告)日：2018-01-16

申请号：US15410707

申请日：2017-01-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC: H01J37/04 ,  H01J37/05 ,  H01J37/317 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147

CPC classification number: H01J37/045 ,  H01J37/04 ,  H01J37/05 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/083

Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system. The aperture fastener may be a screw and a bevel washer. The first aperture member may be operably coupled to a base plate via an aperture assembly fastener.

公开(公告)号：US09812283B2

公开(公告)日：2017-11-07

申请号：US15404440

申请日：2017-01-12

Applicant: Hermes Microvision Inc.

Inventor： Shuai Li

IPC: H01J37/143 ,  H01J37/28 ,  H01J3/20 ,  H01J37/09

CPC classification number: H01J37/143 ,  H01J3/20 ,  H01J37/063 ,  H01J37/065 ,  H01J37/09 ,  H01J37/14 ,  H01J37/28 ,  H01J2237/0453 ,  H01J2237/063 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/0653 ,  H01J2237/083 ,  H01J2237/141 ,  H01J2237/1415 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: This invention provides a charged particle source, which comprises an emitter and means of generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

公开(公告)号：US20170207057A1

公开(公告)日：2017-07-20

申请号：US15410707

申请日：2017-01-19

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC: H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/04 ,  H01J37/05 ,  H01J37/08 ,  H01J37/09 ,  H01J37/12 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/083

Abstract: An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. An aperture tip may be also fastened to the second aperture member. One or more of the first aperture member, second aperture member, aperture tip, and aperture fastener is made of one or more of a refractory metal, tungsten, lanthanated tungsten alloy, yttrium tungsten alloy, and/or graphite and silicon carbide. The aperture assemblies may define an extraction electrode assembly, a ground electrode assembly, or other electrode assembly in the ion implantation system. The aperture fastener may be a screw and a bevel washer. The first aperture member may be operably coupled to a base plate via an aperture assembly fastener.

公开(公告)号：US20170125205A1

公开(公告)日：2017-05-04

申请号：US15403685

申请日：2017-01-11

Applicant: Hermes Microvision Inc.

Inventor： Xuedong Liu ,  Weiming Ren ,  Shuai Li ,  Zhongwei Chen

IPC: H01J37/147 ,  H01J37/28 ,  H01J37/153

CPC classification number: H01J37/147 ,  H01J37/04 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/061 ,  H01J2237/083 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/2817

Abstract: One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible.

公开(公告)号：US20160336142A1

公开(公告)日：2016-11-17

申请号：US15150858

申请日：2016-05-10

Applicant: Hermes Microvision Inc.

Inventor： Xuedong Liu ,  Weiming Ren ,  Shuai Li ,  Zhongwei Chen

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/06 ,  H01J37/10 ,  H01J37/28 ,  H01J37/22

CPC classification number: H01J37/147 ,  H01J37/04 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/061 ,  H01J2237/083 ,  H01J2237/1532 ,  H01J2237/1534 ,  H01J2237/2817

Abstract: One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible.

Abstract translation: 提出了一种改进的源转换单元和一种减少多光束装置中的库仑效应的方法。 在修改的源转换单元中，在图像形成功能使每个子束在局部变化之后进行像差补偿功能，因此避免了由于子束倾斜/移位引起的不期望的像差。 具有多个库仑效应还原开口的库仑效应降低装置放置在靠近设备的单个电子源的位置，因此可以尽可能早地切断未使用的电子。

公开(公告)号：US20160149123A1

公开(公告)日：2016-05-26

申请号：US14919723

申请日：2015-10-21

Applicant: Jongchul PARK ,  Hyungjoon KWON

Inventor： Jongchul PARK ,  Hyungjoon KWON

IPC: H01L43/12 ,  H01L21/3065

CPC classification number: H01L43/12 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/083 ,  H01J2237/3174 ,  H01J2237/334

Abstract: A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

Abstract translation: 图案形成方法包括以第一入射角提供第一离子束，并以第二入射角提供第二离子束到形成在衬底上的蚀刻目标层的表面。 通过使用第一和第二离子束图案化蚀刻目标层来形成图案。 第一离子束和第二离子束相对于垂直于衬底顶表面的法线基本上彼此对称。 第一入射角和第二入射角中的每一个大于0度并且小于通过从90度减去预定角度而获得的角度。