公开(公告)号：US11127458B1

公开(公告)日：2021-09-21

申请号：US16861204

申请日：2020-04-28

Applicant: Applied Materials, Inc.

Inventor： Deepak Kamalanathan ,  Siddarth Krishnan ,  Fuxi Cai ,  Christophe J Chevallier

IPC: G11C11/56 ,  G11C13/00

Abstract: A method of setting multi-state memory elements into at least one low-power state may include receiving a command to cause a memory element to transition into one of three or more states; applying a first signal to the memory element to transition the memory element into the one of the three or more states, where the three or more states are evenly spaced in a portion of an operating range of the memory element; receiving a command to cause a memory element to transition into a low-power state; applying a second signal to the memory element to transition the memory element into the low-power state, where the low-power state is outside of the portion of the operating range of the memory element by an amount greater than a space between each of the three or more states.