公开(公告)号：US20200216952A1

公开(公告)日：2020-07-09

申请号：US16685340

申请日：2019-11-15

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  David BLAHNIK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

IPC: C23C16/44

Abstract: The present disclosure relates to pumping devices, components thereof, and methods associated therewith for substrate processing chambers. In one example, a pumping ring for substrate processing chambers includes a body. The body includes an upper wall, a lower wall, an inner radial wall, and an outer radial wall. The pumping ring also includes an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall. The pumping ring also includes a first exhaust port in the body that is fluidly coupled to the annulus, and a second exhaust port in the body that is fluidly coupled to the annulus. The pumping ring also includes a first baffle disposed in the annulus adjacent to the first exhaust port, and a second baffle disposed in the annulus adjacent to the second exhaust port.

公开(公告)号：US20220403520A1

公开(公告)日：2022-12-22

申请号：US17893018

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh NGUYEN ,  Jason M. SCHALLER ,  Edward P. HAMMOND, IV ,  David BLAHNIK ,  Tejas ULAVI ,  Amit Kumar BANSAL ,  Sanjeev BALUJA ,  Jun MA ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/505 ,  C23C16/44 ,  C23C16/458

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

公开(公告)号：US20210032748A1

公开(公告)日：2021-02-04

申请号：US16941994

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Luke BONECUTTER ,  David BLAHNIK ,  Tuan Anh NGUYEN ,  Amit Kumar BANSAL

IPC: C23C16/458 ,  H01J37/32 ,  C23C16/505

Abstract: Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

公开(公告)号：US20190148186A1

公开(公告)日：2019-05-16

申请号：US16157808

申请日：2018-10-11

Applicant: Applied Materials, Inc.

Inventor： Jason M. SCHALLER ,  Robert Brent VOPAT ,  Charles T. CARLSON ,  Jeffrey Charles BLAHNIK ,  Timothy J. FRANKLIN ,  David BLAHNIK ,  Aaron WEBB

IPC: H01L21/67 ,  H01L21/673

Abstract: Apparatuses for annealing semiconductor substrates, such as a batch processing chamber, are provided herein. The batch processing chamber includes a chamber body enclosing an internal volume, a cassette moveably disposed within the internal volume and a plug coupled to a bottom wall of the cassette. The chamber body has a hole through a bottom wall of the chamber body and is interfaced with one or more heaters operable to maintain the chamber body at a temperature of greater than 290° C. The cassette is configured to be raised to load a plurality of substrates thereon and lowered to seal the internal volume. The plug is configured to move up and down within the internal volume. The plug includes a downward-facing seal configured to engage with a top surface of the bottom wall of the chamber body and close the hole through the bottom wall of the chamber body.