中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.014 seconds)

    HEATED CERAMIC FACEPLATE
    1.
    发明申请
    HEATED CERAMIC FACEPLATE 审中-公开

    公开(公告)号：US20190226087A1

    公开(公告)日：2019-07-25

    申请号：US16254806

    申请日：2019-01-23

    Applicant: Applied Materials, Inc.

    Inventor： Yuxing ZHANG ,  Kaushik ALAYAVALLI ,  Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Daniel HWUNG

    IPC: C23C16/455

    Abstract: Embodiments herein relate to apparatus for gas distribution in a processing chamber. More specifically, aspects of the disclosure relate to a ceramic faceplate. The faceplate generally has a ceramic body. A recess is formed in an upper surface of the faceplate body. A plurality of apertures is formed in the recess through the faceplate. A heater is optionally disposed in the recess to heat the faceplate.

    PROCESS KIT FOR A HIGH THROUGHPUT PROCESSING CHAMBER
    3.
    发明申请
    PROCESS KIT FOR A HIGH THROUGHPUT PROCESSING CHAMBER 有权
    高速加工室的工艺套件

    公开(公告)号：US20160181088A1

    公开(公告)日：2016-06-23

    申请号：US14975133

    申请日：2015-12-18

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

    IPC: H01L21/02

    CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

    Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

    Abstract translation: 本文公开了一种用于处理衬底的处理室。 在一个实施例中，处理室包括设置在处理室的内部容积内的衬套组件，以及设置在室的内部容积中的C形通道，其限定衬套组件。 在另一个实施例中，本文公开了一种设置在处理室的内部容积中的处理套件。 该处理套件包括衬套组件，C通道和设置在内部容积中的隔离器。 C通道和隔离器限定衬套组件。 本文还描述了通过将前体气体流入处理室中将硅基材料沉积在基底上的方法。

    METHOD AND SYSTEM FOR CLEANING A PROCESS CHAMBER
    4.
    发明申请
    METHOD AND SYSTEM FOR CLEANING A PROCESS CHAMBER 审中-公开

    公开(公告)号：US20200251311A1

    公开(公告)日：2020-08-06

    申请号：US16855126

    申请日：2020-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

    PUMPING APPARATUS AND METHOD FOR SUBSTRATE PROCESSING CHAMBERS
    5.
    发明申请
    PUMPING APPARATUS AND METHOD FOR SUBSTRATE PROCESSING CHAMBERS 审中-公开

    公开(公告)号：US20200216952A1

    公开(公告)日：2020-07-09

    申请号：US16685340

    申请日：2019-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit GHOSH ,  David BLAHNIK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN

    IPC: C23C16/44

    Abstract: The present disclosure relates to pumping devices, components thereof, and methods associated therewith for substrate processing chambers. In one example, a pumping ring for substrate processing chambers includes a body. The body includes an upper wall, a lower wall, an inner radial wall, and an outer radial wall. The pumping ring also includes an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall. The pumping ring also includes a first exhaust port in the body that is fluidly coupled to the annulus, and a second exhaust port in the body that is fluidly coupled to the annulus. The pumping ring also includes a first baffle disposed in the annulus adjacent to the first exhaust port, and a second baffle disposed in the annulus adjacent to the second exhaust port.

    FACEPLATE WITH EMBEDDED HEATER
    8.
    发明申请
    FACEPLATE WITH EMBEDDED HEATER 审中-公开

    公开(公告)号：US20200040452A1

    公开(公告)日：2020-02-06

    申请号：US16510845

    申请日：2019-07-12

    Applicant: Applied Materials, Inc.

    Inventor： Daniel HWUNG ,  Yuxing ZHANG ,  Kalyanjit GHOSH ,  Kaushik ALAYAVALLI ,  Amit Kumar BANSAL

    IPC: C23C16/455 ,  H01L21/67

    Abstract: A faceplate for a processing chamber is disclosed. The faceplate has a body with a plurality of apertures formed therethrough. A flexure is formed in the body partially circumscribing the plurality of apertures. A cutout is formed through the body on a common radius with the flexure. One or more bores extend from a radially inner surface of the cutout to an outer surface of the body. A heater is disposed between flexure and the plurality of apertures. The flexure and the cutout are thermal chokes which limit heat transfer thereacross from the heater.

    Method And System For Cleaning A Process Chamber
    9.
    发明申请
    Method And System For Cleaning A Process Chamber 审中-公开

    公开(公告)号：US20190080889A1

    公开(公告)日：2019-03-14

    申请号：US15701222

    申请日：2017-09-11

    Applicant: Applied Materials, Inc.

    Inventor： Kalyanjit GHOSH ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ZHOU ,  Amit Kumar BANSAL ,  Sanjeev BALUJA

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

    CHAMBER LINER FOR HIGH TEMPERATURE PROCESSING
    10.
    发明申请
    CHAMBER LINER FOR HIGH TEMPERATURE PROCESSING 审中-公开

    公开(公告)号：US20170275753A1

    公开(公告)日：2017-09-28

    申请号：US15434853

    申请日：2017-02-16

    Applicant: Applied Materials, Inc.

    Inventor： Sanjeev BALUJA ,  Ren-Guan DUAN ,  Kalyanjit GHOSH

    IPC: C23C16/44 ,  C23C16/455

    CPC classification number: C23C16/4401 ,  C23C16/45587

    Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

Patent Agency Ranking