公开(公告)号：US20230295803A1

公开(公告)日：2023-09-21

申请号：US18135024

申请日：2023-04-14

Applicant: Applied Materials, Inc.

Inventor： Haoming Yan ,  Shih Chung Chen ,  Mandyam Sriram ,  EunKee Hong ,  Janardhan Devrajan ,  Lakmal C. Kalutarage ,  Yongjing Lin ,  Lisa Michelle Mandrell ,  Arkaprava Dan

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3205 ,  H01L29/40

CPC classification number: C23C16/45553 ,  C23C16/56 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32055 ,  H01L21/28575 ,  H01L29/401

Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.