公开(公告)号：US20230295803A1

公开(公告)日：2023-09-21

申请号：US18135024

申请日：2023-04-14

Applicant: Applied Materials, Inc.

Inventor： Haoming Yan ,  Shih Chung Chen ,  Mandyam Sriram ,  EunKee Hong ,  Janardhan Devrajan ,  Lakmal C. Kalutarage ,  Yongjing Lin ,  Lisa Michelle Mandrell ,  Arkaprava Dan

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3205 ,  H01L29/40

CPC classification number: C23C16/45553 ,  C23C16/56 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32055 ,  H01L21/28575 ,  H01L29/401

Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.

公开(公告)号：US20230313378A1

公开(公告)日：2023-10-05

申请号：US17709931

申请日：2022-03-31

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Lei Zhou ,  Muhannad Mustafa ,  Shih Chung Chen ,  Zhihui Liu ,  Chi-Chou Lin ,  Bin Cao ,  Janardhan Devrajan ,  Mario D. Silvetti ,  Mandyam Sriram

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45544

Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

公开(公告)号：US20250081593A1

公开(公告)日：2025-03-06

申请号：US18459582

申请日：2023-09-01

Applicant: Applied Materials ,Inc

Inventor： Yongjing Lin ,  Zhihui Liu ,  Sourav Garg ,  Lu Li ,  Haoming Yan ,  Haoyan Sha ,  Bhaskar Jyoti Bhuyan ,  Shih Chung Chen ,  Janardhan Devrajan ,  Srinivas Gandikota

IPC: H01L21/8238 ,  H01L21/02 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423

Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.

公开(公告)号：US20240404830A1

公开(公告)日：2024-12-05

申请号：US18203417

申请日：2023-05-30

Applicant: Applied Materials, Inc.

Inventor： Radhika P. Patil ,  Tatsuya E. Sato ,  Haoyan Sha ,  Abinash Tripathy ,  Michael S. Jackson ,  Janardhan Devrajan

IPC: H01L21/28

Abstract: Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer is formed with periodic treatment. The resulting gapfill in advantageously seam-free.

公开(公告)号：US20240204061A1

公开(公告)日：2024-06-20

申请号：US18067979

申请日：2022-12-19

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Yongjing Lin ,  Tuerxun Ailihumaer ,  Tengzhou Ma ,  Yuanhua Zheng ,  Zhihui Liu ,  Shih Chung Chen ,  Janardhan Devrajan ,  Yi Xu ,  Yu Lei ,  Mandyam Sriram

IPC: H01L29/40 ,  H01L29/423

CPC classification number: H01L29/401 ,  H01L29/42392 ,  H01L29/4925

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide methods to reduce the resistance of the work function layer of an electronic device, as well as using a low resistivity metal for filling the gate.

公开(公告)号：US11189508B2

公开(公告)日：2021-11-30

申请号：US16581029

申请日：2019-09-24

Applicant: Applied Materials, Inc.

Inventor： Ji-Dih Hu ,  Brian H. Burrows ,  Janardhan Devrajan ,  Schubert Chu

IPC: H01L21/67 ,  C23C16/44 ,  C30B25/08 ,  G01J5/00 ,  H05B3/00 ,  G01K11/12 ,  G01J5/02 ,  G01J5/08

Abstract: Embodiments described herein generally relate to an in-situ metrology system that can constantly provide an uninterrupted optical access to a substrate disposed within a process chamber. In one embodiment, a metrology system for a substrate processing chamber is provided. The metrology system includes a sensor view pipe coupling to a quartz dome of a substrate processing chamber, a flange extending radially from an outer surface of the sensor view pipe, and a viewport window disposed on the flange, the viewport window having spectral ranges chosen for an optical sensor that is disposed on or adjacent to the viewport window.