公开(公告)号：US12092956B2

公开(公告)日：2024-09-17

申请号：US17703315

申请日：2022-03-24

Applicant: Applied Materials, Inc.

Inventor： Jing Jiang ,  Chien-An Chen ,  Rutger Meyer Timmerman Thijssen

IPC: G03F7/00 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/0005 ,  G03F7/2043 ,  G03F7/162

Abstract: Methods of forming optical devices using nanoimprint lithography and etch processes are provided. In one embodiment, a method is provided that includes depositing a first resist layer on a substrate, the substrate having a hardmask disposed thereon, imprinting a first resist portion of the first resist layer with a first single-height stamp, etching the first resist portion of the first resist layer, etching a first hardmask portion of the hardmask corresponding to the first resist portion of the first resist layer, removing the first resist layer and depositing a second resist layer, imprinting a second resist portion of the second resist layer with a second single-height stamp, etching the second resist portion of the second resist layer, and etching a second hardmask portion of the hardmask corresponding to the second resist portion of the second resist layer.

公开(公告)号：US11567417B2

公开(公告)日：2023-01-31

申请号：US17579349

申请日：2022-01-19

Applicant: Applied Materials, Inc.

Inventor： Jing Jiang ,  Suraj Yadav ,  Amita Joshi ,  Vivian Hsu

IPC: G03F7/20 ,  G02B6/26

Abstract: Apparatus and methods of performing nanoimprint lithography using an anti-slip landing ring are provided. In one embodiment, a process chamber for nanoimprint lithography is provided and includes a substrate support and a ring disposed on the substrate support. The ring has a top surface opposite the substrate support, and the top surface has a grid pattern. A bottom surface facing the substrate support has a different pattern compared to the grid pattern.