公开(公告)号：US12044821B2

公开(公告)日：2024-07-23

申请号：US16877158

申请日：2020-05-18

申请人： Applied Materials, Inc.

发明人： Sage Toko Garrett Doshay ,  Rutger Meyer Timmerman Thijssen ,  Ludovic Godet ,  Chien-An Chen ,  Pinkesh Rohit Shah

IPC分类号： G03F7/00 ,  G02B1/00

CPC分类号： G02B1/002 ,  G03F7/0002

摘要： Embodiments described herein relate to methods for fabricating optical devices. The methods described herein enable the fabrication of one or more optical devices on a substrate with apertures surrounding each of the optical devices having a plurality of structures. One embodiment of the methods described herein includes disposing an aperture material layer on a surface of a substrate, disposing a structure material layer over the apertures and the surface of the substrate, disposing a hardmask over the apertures and the structure material layer, disposing a patterned photoresist over the hardmask, the patterned photoresist defining exposed hardmask portions, removing the exposed hardmask portions to expose structure portions of the structure material layer, and removing the structure portions to form a plurality of structures between the apertures over regions of the surface of the substrate.

公开(公告)号：US11226556B2

公开(公告)日：2022-01-18

申请号：US16844636

申请日：2020-04-09

申请人： Applied Materials, Inc.

发明人： Ludovic Godet ,  Chien-An Chen ,  Brian Alexander Cohen ,  Wayne McMillan ,  Ian Matthew McMackin

IPC分类号： G03F7/00 ,  H01L21/311 ,  G02B6/34

摘要： Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

公开(公告)号：US10818472B2

公开(公告)日：2020-10-27

申请号：US16716954

申请日：2019-12-17

申请人： Applied Materials, Inc.

发明人： Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen

IPC分类号： H01J37/305 ,  H01J37/32 ,  H01J37/073 ,  G02B6/13 ,  H01J37/147 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/304

摘要： Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US12060297B2

公开(公告)日：2024-08-13

申请号：US17466803

申请日：2021-09-03

申请人： Applied Materials, Inc.

发明人： Yongan Xu ,  Chien-An Chen ,  Ludovic Godet

IPC分类号： B32B15/04 ,  B32B17/06 ,  C03C17/36 ,  C03C17/38

CPC分类号： C03C17/3639 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3655 ,  C03C17/38 ,  C03C2217/213 ,  C03C2218/365

摘要： Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.

公开(公告)号：US11614685B2

公开(公告)日：2023-03-28

申请号：US17545554

申请日：2021-12-08

申请人： Applied Materials, Inc.

发明人： Ludovic Godet ,  Chien-An Chen ,  Brian Alexander Cohen ,  Wayne McMillan ,  Ian Matthew McMackin

IPC分类号： G03F7/00 ,  H01L21/311 ,  G02B6/34

摘要： Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

公开(公告)号：US12092956B2

公开(公告)日：2024-09-17

申请号：US17703315

申请日：2022-03-24

申请人： Applied Materials, Inc.

发明人： Jing Jiang ,  Chien-An Chen ,  Rutger Meyer Timmerman Thijssen

IPC分类号： G03F7/00 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/0005 ,  G03F7/2043 ,  G03F7/162

摘要： Methods of forming optical devices using nanoimprint lithography and etch processes are provided. In one embodiment, a method is provided that includes depositing a first resist layer on a substrate, the substrate having a hardmask disposed thereon, imprinting a first resist portion of the first resist layer with a first single-height stamp, etching the first resist portion of the first resist layer, etching a first hardmask portion of the hardmask corresponding to the first resist portion of the first resist layer, removing the first resist layer and depositing a second resist layer, imprinting a second resist portion of the second resist layer with a second single-height stamp, etching the second resist portion of the second resist layer, and etching a second hardmask portion of the hardmask corresponding to the second resist portion of the second resist layer.

公开(公告)号：US11462386B2

公开(公告)日：2022-10-04

申请号：US16716965

申请日：2019-12-17

申请人： Applied Materials, Inc.

发明人： Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC分类号： H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

摘要： Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11430634B2

公开(公告)日：2022-08-30

申请号：US17080802

申请日：2020-10-26

申请人： Applied Materials, Inc.

发明人： Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Kartik Ramaswamy ,  Yang Yang ,  Manivannan Thothadri ,  Chien-An Chen

IPC分类号： H01J37/305 ,  H01J37/32 ,  G02B6/13 ,  H01L21/3065 ,  G02B5/18 ,  H01J37/05 ,  G02B6/12 ,  G02B6/124 ,  G06T19/00 ,  H01J37/073 ,  H01J37/304 ,  H01J37/147

摘要： Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings. In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

公开(公告)号：US11681083B2

公开(公告)日：2023-06-20

申请号：US16880846

申请日：2020-05-21

申请人： Applied Materials, Inc.

发明人： Sage Toko Garrett Doshay ,  Rutger Meyer Timmerman Thijssen ,  Ludovic Godet ,  Chien-An Chen ,  Pinkesh Rohit Shah

IPC分类号： G02B5/22 ,  G02B5/20

CPC分类号： G02B5/20 ,  G02B2207/101

摘要： Embodiments of the present disclosure relate to methods for fabricating optical devices. One embodiment of the method includes disposing a structure material layer on a surface of a substrate and disposing a patterned photoresist over the structure material layer. The patterned photoresist has at least one device portion and at least one auxiliary portion. Each device portion and each auxiliary portion exposes unmasked portions of the structure material layer. The unmasked portions of structure material layer corresponding to each device portion and each auxiliary portion are etched. The etching the unmasked portions forms at least one optical device having device structures corresponding to the unmasked portions of at least one device portion and at least one auxiliary region having auxiliary structures corresponding to the unmasked portions of at least one auxiliary portion.

公开(公告)号：US11572619B2

公开(公告)日：2023-02-07

申请号：US16795232

申请日：2020-02-19

申请人： Applied Materials, Inc.

发明人： Jinrui Guo ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Yongan Xu ,  Jhenghan Yang ,  Chien-An Chen

IPC分类号： C23C16/04 ,  C23C16/56 ,  C23C16/30

摘要： Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.