公开(公告)号：US20240274724A1

公开(公告)日：2024-08-15

申请号：US18414844

申请日：2024-01-17

Applicant: Applied Materials, Inc.

Inventor： Jody A. Fronheiser ,  Sai Hooi Yeong ,  Andre P. Labonte ,  Joseph Francis Shepard, JR. ,  David Collins ,  Ning Li

IPC: H01L29/786 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/78696 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: Horizontal gate-all-around devices and methods of manufacture are described. The hGAA devices comprise a semiconductor material between source regions and drain regions of the device. The method includes formation of a cladding material on a first material followed by forming a tensile film on the cladding layer. The strained tensile film results in a uniform SiGe channel.