公开(公告)号：US20240274724A1

公开(公告)日：2024-08-15

申请号：US18414844

申请日：2024-01-17

Applicant: Applied Materials, Inc.

Inventor： Jody A. Fronheiser ,  Sai Hooi Yeong ,  Andre P. Labonte ,  Joseph Francis Shepard, JR. ,  David Collins ,  Ning Li

IPC: H01L29/786 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/78696 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: Horizontal gate-all-around devices and methods of manufacture are described. The hGAA devices comprise a semiconductor material between source regions and drain regions of the device. The method includes formation of a cladding material on a first material followed by forming a tensile film on the cladding layer. The strained tensile film results in a uniform SiGe channel.

公开(公告)号：US11819847B2

公开(公告)日：2023-11-21

申请号：US16933597

申请日：2020-07-20

Applicant: Applied Materials, Inc.

Inventor： Ryan Scott Smith ,  Roger Quon ,  David Collins ,  George Odlum ,  Raghav Sreenivasan ,  Joseph R. Johnson

IPC: B01L3/00 ,  B82B1/00 ,  B82B3/00 ,  G01N27/447 ,  G01N33/487 ,  G01N27/40

CPC classification number: B01L3/502753 ,  B82B1/005 ,  B82B3/008 ,  G01N27/40 ,  G01N27/44791 ,  G01N33/48721 ,  B01L2200/0647 ,  B01L2300/0896 ,  B01L2300/12

Abstract: Embodiments of the present disclosure provide nanopore devices, such as nanopore sensors and/or other nanofluidic devices. In one or more embodiments, a nanopore device contains a substrate, an optional lower protective oxide layer disposed on the substrate, a membrane disposed on the lower protective oxide layer, and an optional upper protective oxide layer disposed on the membrane. The membrane has a pore and contains silicon nitride. The silicon nitride has a nitrogen to silicon ratio of about 0.98 to about 1.02 and the membrane has an intrinsic stress value of about −1,000 MPa to about 1,000 MPa. The nanopore device also contains a channel extending through at least the substrate, the lower protective oxide layer, the membrane, the upper protective oxide layer, and the upper protective silicon nitride layer.