公开(公告)号：US11362275B2

公开(公告)日：2022-06-14

申请号：US16855122

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis Gabriel Breil ,  Siddarth Krishnan ,  Shashank Sharma ,  Ria Someshwar ,  Kai Ng ,  Deepak Kamalanathan

IPC: H01L45/00 ,  H01L27/24

Abstract: Exemplary methods of forming a memory structure may include forming a layer of a transition-metal-and-oxygen-containing material overlying a substrate. The substrate may include a first electrode material. The methods may include annealing the transition-metal-and-oxygen-containing material at a temperature greater than or about 500° C. The annealing may occur for a time period less than or about one second. The methods may also include, subsequent the annealing, forming a layer of a second electrode material over the transition-metal-and-oxygen-containing material.