公开(公告)号：US11521849B2

公开(公告)日：2022-12-06

申请号：US16391219

申请日：2019-04-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook Park ,  Sunil Srinivasan ,  Rajinder Dhindsa ,  Jonathan Sungehul Kim ,  Lin Yu ,  Zhonghua Yao ,  Olivier Luere

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.