公开(公告)号：US20170175265A1

公开(公告)日：2017-06-22

申请号：US14974541

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Schubert S. CHU ,  Nyi O. MYO ,  Karthik RAMANATHAN ,  Richard O. COLLINS ,  Zhepeng CONG ,  Nitin PATHAK

IPC: C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4583 ,  C23C16/4581 ,  C23C16/4584 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68714 ,  H01L21/68735

Abstract: In one embodiment, a susceptor is provided and includes a first major surface opposing a second major surface, and a plurality of contact structures disposed on the first major surface, each of the contact structures being at least partially surrounded by one or more of a plurality of radially oriented grooves and an annular groove, wherein each of the plurality of contact structures includes a substrate contact surface, each of the substrate contact surfaces is between two parallel planes separated by a distance of 0.1 millimeters, and the substrate contact surfaces define a substrate receiving surface.

公开(公告)号：US20230047451A1

公开(公告)日：2023-02-16

申请号：US17974408

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Nitin PATHAK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Thomas RUBIO ,  Badri N. RAMAMURTHI ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/44

Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

公开(公告)号：US20200043704A1

公开(公告)日：2020-02-06

申请号：US16516419

申请日：2019-07-19

Applicant: Applied Materials, Inc.

Inventor： Tejas ULAVI ,  Amit Kumar BANSAL ,  Nitin PATHAK ,  Ajit BALAKRISHNA

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/02

Abstract: Embodiments of the present disclosure relate to apparatus for improving quality of films deposited on a substrate by a CVD process. More specifically, a branched gas feed assembly uniformly distributes a process gas entering an annular plenum. Each conduit of a first plurality of conduits having substantially equal flow conductance is in fluid communication with one or more conduits of a second plurality of conduits having substantially equal flow conductance. Each conduit of the second plurality of conduits terminates at one of a plurality of outlets. Each outlet of the plurality of outlets is in fluid communication with one or more inlet ports of a plurality of inlet ports formed in the annular plenum. Each inlet port of the plurality of inlet ports is spaced equidistant about a central axis of the annular plenum.

公开(公告)号：US20240368756A1

公开(公告)日：2024-11-07

申请号：US18744079

申请日：2024-06-14

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Tuan Anh (Mike) NGUYEN ,  Amit Kumar BANSAL ,  Nitin PATHAK ,  Saket RATHI ,  Thomas RUBIO ,  Udit Suryakant KOTAGI ,  Badri N. RAMAMURTHI ,  Dharma Ratnam SRICHURNAM

IPC: C23C16/44 ,  C23C16/455

Abstract: The present disclosure relates to cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a method includes positioning a pedestal disposed in a substrate processing chamber in a first vertical position for a first time period, directing cleaning fluid into the internal volume of the substrate processing chamber located above the faceplate, diverting a portion of the cleaning fluid to the distribution ring and into the internal volume located below the faceplate by opening up the isolation valve, and positioning the pedestal in one or more additional vertical positions while the isolation valve is opened, the one or more additional vertical positions being different than the first vertical position.

公开(公告)号：US20210002763A1

公开(公告)日：2021-01-07

申请号：US16896982

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Nitin PATHAK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Thomas RUBIO ,  Badri N. RAMAMURTHI ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/458 ,  C23C16/455

Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

公开(公告)号：US20160133504A1

公开(公告)日：2016-05-12

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. CHU ,  Kartik SHAH ,  Anhthu NGO ,  Karthik RAMANATHAN ,  Nitin PATHAK ,  Nyi O. MYO ,  Paul BRILLHART ,  Richard O. COLLINS ,  Kevin Joseph BAUTISTA ,  Edric TONG ,  Zhepeng CONG ,  Anzhong CHANG ,  Kin Pong LO ,  Manish HEMKAR

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  H01L21/67115

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Abstract translation: 本公开的实施方式一般涉及用于半导体衬底的热处理的基座。 在一个实施方式中，基座包括围绕并联接到内部区域的第一边缘和设置在内边缘和第一边缘之间的第二边缘。 第二边缘包括具有形成在其中的多个切口的成角度的支撑表面，并且成角度的支撑表面相对于内部区域的顶部表面倾斜。