公开(公告)号：US20250046596A1

公开(公告)日：2025-02-06

申请号：US18920604

申请日：2024-10-18

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Schubert S. CHU ,  Tushar MANDREKAR ,  Errol C. SANCHEZ ,  Kin Pong LO

IPC: H01L21/02 ,  B08B7/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US20170350038A1

公开(公告)日：2017-12-07

申请号：US15499100

申请日：2017-04-27

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Schubert S. CHU

IPC: C30B25/18 ,  H01L21/67 ,  C30B29/06 ,  H01L21/02 ,  C30B29/52 ,  H01L21/677 ,  C30B25/20

CPC classification number: C30B25/186 ,  C30B25/00 ,  C30B29/06 ,  C30B29/52 ,  C30B35/00 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32899 ,  H01L21/02046 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67207

Abstract: Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma-cleaning chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma-cleaning chamber for removing carbon-containing contaminants from the surface of the substrate.

公开(公告)号：US20240112945A1

公开(公告)日：2024-04-04

申请号：US18539507

申请日：2023-12-14

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20180084610A1

公开(公告)日：2018-03-22

申请号：US15824489

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Paul BRILLHART ,  Ramachandran BALASUBRAMANIAN ,  Satheesh KUPPURAO ,  Daniel REDFIELD ,  Joseph M. RANISH ,  James Francis MACK ,  Kailash Kiran PATALAY ,  Michael OLSEN ,  Eddie FEIGEL ,  Richard HALPIN ,  Brett VETORINO

IPC: H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

公开(公告)号：US20160068955A1

公开(公告)日：2016-03-10

申请号：US14822689

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  Zhiyuan YE ,  Satheesh KUPPURAO

IPC: C23C16/455 ,  C30B25/14

CPC classification number: C23C16/45565

Abstract: Embodiments provided herein generally relate to an apparatus for gas delivering in a semiconductor process chamber. The apparatus may be a gas distribution plate that has a plurality of through holes and a plurality of blind holes formed therein. Process gases are provided into a processing volume of the semiconductor process chamber through the through holes of the gas distribution plate. The blind holes are utilized to control the temperature of the gas distribution plate using a phase change material.

Abstract translation: 本文提供的实施例通常涉及用于在半导体处理室中输送气体的装置。 该装置可以是具有形成在其中的多个通孔和多个盲孔的气体分配板。 通过气体分配板的通孔将工艺气体提供到半导体处理室的处理体积中。 盲孔用于使用相变材料控制气体分配板的温度。

公开(公告)号：US20220301920A1

公开(公告)日：2022-09-22

申请号：US17832775

申请日：2022-06-06

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Vladimir NAGORNY ,  Wei LIU ,  Theresa Kramer GUARINI ,  Bernard L. HWANG ,  Malcolm J. BEVAN ,  Jacob ABRAHAM ,  Swayambhu Prasad BEHERA

IPC: H01L21/687 ,  H01J37/32 ,  C23C16/455 ,  H01L21/67 ,  C23C16/458

Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

公开(公告)号：US20190066998A1

公开(公告)日：2019-02-28

申请号：US16100399

申请日：2018-08-10

Applicant: Applied Materials, Inc.

Inventor： Lara HAWRYLCHAK ,  Schubert S. CHU ,  Tushar MANDREKAR ,  Errol C. SANCHEZ ,  Kin Pong LO

IPC: H01L21/02 ,  C30B25/02 ,  C23C16/02 ,  B08B7/00 ,  H01J37/32

Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US20160033070A1

公开(公告)日：2016-02-04

申请号：US14550723

申请日：2014-11-21

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  James Francis MACK ,  Kin Pong LO ,  Zhiyuan YE

IPC: F16L55/00

CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/481

Abstract: Embodiments of the disclosure relate to a perimeter pumping member for a processing chamber. The perimeter pumping member comprises a ring-shaped body having a first curved channel along an arc within the ring-shaped body, a first inner channel connecting a first region of the first curved channel to a first region of an inner surface of the ring-shaped body, a plurality of second inner channels connecting a second region of the first curved channel to a second region of the inner surface, and a first outer channel connecting the first region of the first curved channel to an outer surface of the ring-shaped body, wherein the second inner channels are each sized such that, when a fluid is pumped out of the perimeter pumping member via the first outer channel, the fluid flows through the first inner channel and the second inner channels at a uniform flow rate.

Abstract translation: 本公开的实施例涉及用于处理室的周边泵送构件。 周边泵送构件包括环形体，其具有沿环形体内的弧形的第一弯曲通道，将第一弯曲通道的第一区域连接到环形体的内表面的第一区域的第一内部通道， 多个第二内部通道，将第一弯曲通道的第二区域连接到内表面的第二区域;以及第一外部通道，其将第一弯曲通道的第一区域连接到环形体的外表面 其中所述第二内部通道的尺寸设计成使得当流体经由所述第一外部通道从所述周边泵送构件泵出时，所述流体以均匀的流速流过所述第一内部通道和所述第二内部通道。

公开(公告)号：US20150368830A1

公开(公告)日：2015-12-24

申请号：US14737974

申请日：2015-06-12

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Kin Pong LO ,  Edric TONG ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN

IPC: C30B25/14 ,  C30B25/08

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45563 ,  C30B25/08 ,  Y10T428/218

Abstract: Embodiments of the disclosure relate to a one-piece injector assembly. The injector assembly includes a plurality of channels for introducing process gas into a processing chamber while keeping the gas flow of each channel separate from the gas flow in each other channel. In addition, embodiments of the disclosure relate to upper and lower liners accommodating the one-piece injector assembly, methods for installing the injector assembly, and a processing chamber utilizing the one-piece injector assembly.

Abstract translation: 本公开的实施例涉及一体式喷射器组件。 喷射器组件包括多个通道，用于将处理气体引入处理室，同时保持每个通道的气流与每个通道中的气流隔开。 此外，本公开的实施例涉及容纳一体式喷射器组件的上部衬垫和下部衬套，用于安装喷射器组件的方法以及利用一体式喷射器组件的处理室。

公开(公告)号：US20240192055A1

公开(公告)日：2024-06-13

申请号：US18581626

申请日：2024-02-20

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Lara HAWRYLCHAK ,  Malcolm J. BEVAN ,  Theresa Kramer GUARINI ,  Wei LIU ,  Bernard L. HWANG

IPC: G01J3/28 ,  G01J3/02 ,  G01J3/10 ,  G01J3/443

CPC classification number: G01J3/28 ,  G01J3/0218 ,  G01J3/10 ,  G01J3/443 ,  G01J2003/2879

Abstract: One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.