公开(公告)号：US20140366912A1

公开(公告)日：2014-12-18

申请号：US14280201

申请日：2014-05-16

Applicant: Applied Materials, Inc.

Inventor： Richard J. GREEN ,  Cheng-Hsiung TSAI ,  Shambhu N. ROY ,  Puneet BAJAJ ,  David H. LOO

IPC: H01J37/32 ,  C23C14/56

CPC classification number: H01J37/32862 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3408

Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.

Abstract translation: 提供了用于沉积室的原位等离子体清洗的方法和装置。 在一个实施例中，提供了一种用于在不破坏真空的情况下等离子体清洁沉积室的方法。 该方法包括将基板定位在设置在室中的基座上并由电浮动沉积环外接，在基板上沉积金属膜和在室中沉积环，使沉积在沉积环上的金属膜接地而不破坏真空， 以及在腔室中形成的等离子体从室中除去污染物，而不对接地的沉积环上的金属膜进行再溅射，而不破坏真空。