公开(公告)号：US12131887B2

公开(公告)日：2024-10-29

申请号：US17307654

申请日：2021-05-04

申请人： Tokyo Electron Limited

发明人： Yunho Kim ,  Yanxiang Shi ,  Mingmei Wang

IPC分类号： H01J37/32 ,  H01J37/18 ,  H01L21/67

CPC分类号： H01J37/32266 ,  H01J37/18 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32715 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069

摘要： A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes microwave source coupled to a microwave oscillator, and an electromagnetic (EM) metasurface, where the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

公开(公告)号：US12125688B2

公开(公告)日：2024-10-22

申请号：US17183595

申请日：2021-02-24

申请人： APPLIED MATERIALS, INC.

发明人： Hamid Noorbakhsh ,  James Hugh Rogers

IPC分类号： H01J37/32

CPC分类号： H01J37/32733 ,  H01J37/32467 ,  H01J37/32715

摘要： Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a slit door having an arcuate profile and including a first plate slidably coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, wherein the second plate has an inner surface that includes silicon, and wherein the inner surface includes a plurality of grooves.

公开(公告)号：US12125683B2

公开(公告)日：2024-10-22

申请号：US17324435

申请日：2021-05-19

申请人： Applied Materials, Inc.

发明人： Mingle Tong

IPC分类号： H01J37/32 ,  C23C14/54 ,  C23C16/52 ,  H01L21/02 ,  H01L21/033 ,  H01L21/66

CPC分类号： H01J37/32495 ,  C23C14/545 ,  C23C16/52 ,  H01J37/32715 ,  H01J37/32899 ,  H01L21/02274 ,  H01L21/0332 ,  H01L22/26 ,  H01J2237/3321 ,  H01J2237/3323

摘要： Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The semiconductor processing systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrates support may include a shaft coupled with the support plate. The semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of the support plate. An inner surface of the liner may include an emissivity texture.

公开(公告)号：US20240347371A1

公开(公告)日：2024-10-17

申请号：US18751140

申请日：2024-06-21

申请人： NHK SPRING CO., LTD.

发明人： Yusuke OTSUKA ,  Naoya KIDA ,  Jun FUTAKUCHIYA ,  Noriyoshi KANEDA ,  Hibiki YOKOYAMA ,  Michiyoshi SONE ,  Hiroki SAKAMOTO

IPC分类号： H01L21/687 ,  H01J37/32

CPC分类号： H01L21/68757 ,  H01J37/32715 ,  H01J2237/2007

摘要： A laminate structure of the disclosure is a laminate structure for a semiconductor manufacturing device, and includes a substrate containing aluminum and including a first face, an intermediate layer arranged on the first face of the substrate and containing aluminum oxide, and a cover layer arranged on the intermediate layer and containing metal atoms. The intermediate layer includes a partition wall forming a plurality of voids in a cross-sectional shape parallel to the first face. The intermediate layer includes a boundary layer covering the first face of the substrate. The cover layer is arranged in some of the plurality of voids in the intermediate layer. The plurality of voids includes voids adjacent to the boundary layer and separated from the cover layer.

公开(公告)号：US20240347325A1

公开(公告)日：2024-10-17

申请号：US18750539

申请日：2024-06-21

申请人： Tokyo Electron Limited

发明人： Yuki ONODERA ,  Takamitsu TAKAYAMA

IPC分类号： H01J37/32 ,  H01L21/683

CPC分类号： H01J37/32862 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/2007 ,  H01L21/6831

摘要： A plasma processing apparatus includes: a stage having first and second placement surfaces; an elevating mechanism for raising and lowering a ring member on the second placement surface with respect to the second placement surface; a radio-frequency power source; and a controller for executing a cleaning process including an operation of separating the second placement surface and the ring member from each other by the elevating mechanism; and an operation of removing deposits accumulated on the stage and the ring member by supplying radio-frequency power from the radio-frequency power source to the stage to generate plasma. In the separation operation, a distance between the second placement surface and the ring member is set such that a density of plasma generated in a region between an outer edge of the first placement surface and a lower surface of the ring member is higher than that of plasma generated in other regions.

公开(公告)号：US20240331986A1

公开(公告)日：2024-10-03

申请号：US18616526

申请日：2024-03-26

申请人： Tokyo Electron Limited

发明人： Yasunobu SUZUKI

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32715 ,  H01L21/3065 ,  H01J2237/20207 ,  H01J2237/334

摘要： A plasma etching apparatus includes: a chamber, a support body provided inside the chamber to hold a substrate, a plasma generator provided with a plasma source to generate plasma, and a controller. The support body has a placement surface on which the substrate is placed, rotates the substrate about a perpendicular line passing through a center of the substrate, and is configured such that the placement surface is tilted with respect to a horizontal plane and the perpendicular line passes through a center of the plasma source only when the placement surface is not tilted with respect to the horizontal plane. The controller performs control so that during plasma etching, the placement surface is tilted with respect to the horizontal plane and the substrate is rotated about the perpendicular line, and control so that a total number of rotations of the substrate about the perpendicular line becomes a predetermined value.

公开(公告)号：US20240331985A1

公开(公告)日：2024-10-03

申请号：US18610491

申请日：2024-03-20

申请人： TOTO LTD.

发明人： Ryosuke SAKURAI ,  Keisuke SANO ,  Masafumi IKEGUCHI ,  Jun SHIRAISHI ,  Ikuo ITAKURA ,  Yutaka MOMIYAMA

IPC分类号： H01J37/32 ,  C23C16/458 ,  H01L21/683

CPC分类号： H01J37/32715 ,  C23C16/4583 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01L21/6833

摘要： An electrostatic chuck includes: a dielectric substrate in which a through hole is formed; an RF electrode which is embedded inside the dielectric substrate; and an attracting electrode which is embedded inside the dielectric substrate at a position that is closer to a placement surface than the RF electrode. When viewed from a direction perpendicular to the placement surface, a circular first opening which is concentric with the through hole and which includes the through hole is formed in the attracting electrode and a circular second opening which is concentric with the through hole and which includes the through hole is formed in the RF electrode. A radius of the second opening is larger than a radius of the first opening.

公开(公告)号：US20240312769A1

公开(公告)日：2024-09-19

申请号：US18259385

申请日：2021-08-31

申请人： SUMITOMO OSAKA CEMENT CO., LTD.

发明人： Jun ARIKAWA ,  Nobuhiro HIDAKA ,  Yukio MIURA

IPC分类号： H01J37/32 ,  H01L21/683

CPC分类号： H01J37/32715 ,  H01J37/32568 ,  H01L21/6833

摘要： A ceramic joined body includes: a pair of ceramic plates; and an electrode layer and an insulating layer that are interposed between the pair of ceramic plates and, in which the insulating layer is formed of an insulating material and a conductive material.

公开(公告)号：US12094694B2

公开(公告)日：2024-09-17

申请号：US17149246

申请日：2021-01-14

申请人： Tokyo Electron Limited

发明人： Sumi Tanaka ,  Tamihiro Kobayashi

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/505

CPC分类号： H01J37/32715 ,  C23C16/4583 ,  C23C16/505 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/2002 ,  H01J2237/20235 ,  H01J2237/3321

摘要： A substrate processing apparatus includes: a processing chamber including a processing room; a heating unit that heats the processing chamber; a support including a base thermally isolated from the processing chamber and fixed to the processing chamber, and a stage inserted into an opening provided toward the processing room while being supported by the base at a position distant from a reference position in a horizontal direction, and holds the substrate in the processing room; a stage peripheral member provided in the processing chamber along a periphery of the stage in a state of being inserted into the opening; and a first positioning pin fixed to the processing chamber to position the stage peripheral member, and a second positioning pin fixed to a position farther than the first positioning pin.

公开(公告)号：US12087610B2

公开(公告)日：2024-09-10

申请号：US17809567

申请日：2022-06-29

申请人： NGK Insulators, Ltd.

发明人： Tatsuya Kuno ,  Seiya Inoue

IPC分类号： H01L21/683 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32715 ,  H01J2237/2007

摘要： A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and that contains an electrode; a plug insertion hole that is formed as at least a portion of a through-hole extending through the ceramic plate in an up-down direction, an internal thread portion being on an inner circumferential surface around the plug insertion hole; and an insulating plug that includes an external thread portion screwed on the internal thread portion on an outer circumferential surface and that allows gas to pass therethrough.