公开(公告)号：US20220020599A1

公开(公告)日：2022-01-20

申请号：US17378720

申请日：2021-07-18

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Karthik Janakiraman ,  Rui Cheng ,  Krishna Nittala ,  Menghui Li ,  Ming-Yuan Chuang ,  Susumu Shinohara ,  Juan Guo ,  Xiawan Yang ,  Russell Chin Yee Teo ,  Zihui Li ,  Chia-Ling Kao ,  Qu Jin ,  Anchuan Wang

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.