公开(公告)号：US20250062131A1

公开(公告)日：2025-02-20

申请号：US18234685

申请日：2023-08-16

Applicant: Applied Materials, Inc.

Inventor： Hanbyul Jin ,  Sangjun Park ,  Menghui Li ,  Xiawan Yang ,  Sunil Srinivasan ,  Meishen Liu ,  Andrew Butler ,  Qian Fu

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Methods of semiconductor processing may include forming plasma effluents of a plurality of precursors (e.g., an etchant precursor, an oxygen-containing precursor, and a silicon-and-fluorine-containing precursor like silicon tetrafluoride). The plasma effluents may then contact a silicon-containing material and a mask material on a substrate in a processing region of a semiconductor processing chamber. The mask material may have one or more apertures therein that allow the plasma effluents access to the silicon-containing material. Contacting the silicon-containing material and the mask material with the plasma effluents may cause (i) etching the silicon-containing material with the plasma effluents to form and/or deepen one or more features in the silicon-containing material and (ii) simultaneously etching the mask material and depositing a silicon-and-oxygen-containing material on the mask material with the plasma effluents.

公开(公告)号：US20250054770A1

公开(公告)日：2025-02-13

申请号：US18232991

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.

公开(公告)号：US20250054768A1

公开(公告)日：2025-02-13

申请号：US18232985

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/3065 ,  H01L21/308

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor and a sulfur-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of carbon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The contacting may etch a feature in the layer of carbon-containing material. A chamber operating temperature may be maintained at less than or about 0° C.

公开(公告)号：US20220020599A1

公开(公告)日：2022-01-20

申请号：US17378720

申请日：2021-07-18

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Karthik Janakiraman ,  Rui Cheng ,  Krishna Nittala ,  Menghui Li ,  Ming-Yuan Chuang ,  Susumu Shinohara ,  Juan Guo ,  Xiawan Yang ,  Russell Chin Yee Teo ,  Zihui Li ,  Chia-Ling Kao ,  Qu Jin ,  Anchuan Wang

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.