公开(公告)号：US20160086794A9

公开(公告)日：2016-03-24

申请号：US13920944

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Siu F. CHENG ,  Jacob JANZEN ,  Deenesh PADHI ,  Bok Hoen KIM

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/0273 ,  C23C16/26 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3065

Abstract: Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.

Abstract translation: 本文描述的实施例通常涉及集成电路的制造，更具体地涉及氮掺杂非晶碳层以及用于在半导体衬底上沉积氮掺杂的非晶碳层的工艺。 在一个实施例中，提供了在衬底上形成氮掺杂非晶碳层的方法。 该方法包括将基板定位在基板处理室中，将含氮烃源引入处理室，将烃源引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体 ，并在衬底上形成氮掺杂的无定形碳层。

公开(公告)号：US20140370711A1

公开(公告)日：2014-12-18

申请号：US13920944

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Siu F. CHENG ,  Jacob JANZEN ,  Deenesh PADHI ,  Bok Hoen KIM

IPC: H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/0273 ,  C23C16/26 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/3065

Abstract: Embodiments described herein generally relate to the fabrication of integrated circuits and more particularly to nitrogen doped amorphous carbon layers and processes for depositing nitrogen doped amorphous carbon layers on a semiconductor substrate. In one embodiment, a method of forming a nitrogen doped amorphous carbon layer on a substrate is provided. The method comprises positioning a substrate in a substrate processing chamber, introducing a nitrogen containing hydrocarbon source into the processing chamber, introducing a hydrocarbon source into the processing chamber, introducing a plasma-initiating gas into the processing chamber, generating a plasma in the processing chamber, and forming a nitrogen doped amorphous carbon layer on the substrate.

Abstract translation: 本文描述的实施例通常涉及集成电路的制造，更具体地涉及氮掺杂非晶碳层以及用于在半导体衬底上沉积氮掺杂的非晶碳层的工艺。 在一个实施例中，提供了在衬底上形成氮掺杂非晶碳层的方法。 该方法包括将基板定位在基板处理室中，将含氮烃源引入处理室，将烃源引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体 ，并在衬底上形成氮掺杂的无定形碳层。

公开(公告)号：US20190153592A1

公开(公告)日：2019-05-23

申请号：US16259011

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Dale Du BOIS ,  Mohamad A. AYOUB ,  Robert KIM ,  Amit Kumar BANSAL ,  Mark FODOR ,  Binh NGUYEN ,  Siu F. CHENG ,  Hang YU ,  Chiu CHAN ,  Ganesh BALASUBRAMANIAN ,  Deenesh PADHI ,  Juan Carlos ROCHA

IPC: C23C16/04 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C14/04 ,  H01L21/687 ,  C30B25/12 ,  H01J37/34

Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.