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公开(公告)号：US12136549B2
公开(公告)日：2024-11-05
申请号：US16982789
申请日：2019-03-21
Applicant: Applied Materials, Inc.
Inventor： Byung Seok Kwon , Prashant Kumar Kulshreshtha , Kwangduk Douglas Lee , Bushra Afzal , Sungwon Ha , Vinay K. Prabhakar , Viren Kalsekar , Satya Teja Babu Thokachichu , Edward P. Hammond, IV
IPC: H01L21/033 , C23C16/26 , C23C16/46 , C23C16/505 , H01L21/02
Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.
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公开(公告)号：US12000048B2
公开(公告)日：2024-06-04
申请号：US18111842
申请日：2023-02-20
Applicant: Applied Materials, Inc.
Inventor： Sarah Michelle Bobek , Venkata Sharat Chandra Parimi , Prashant Kumar Kulshreshtha , Vinay K. Prabhakar , Kwangduk Douglas Lee , Sungwon Ha , Jian Li
IPC: C23C16/458 , C23C16/46
CPC classification number: C23C16/4586 , C23C16/4585 , C23C16/46
Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
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公开(公告)号：US20220122823A1
公开(公告)日：2022-04-21
申请号：US17071506
申请日：2020-10-15
Applicant: Applied Materials, Inc.
Inventor： Fei Wu , Abdul Aziz Khaja , Sungwon Ha , Ganesh Balasubramanian , Vinay Prabhakar
IPC: H01J37/32
Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.
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公开(公告)号：US12191169B2
公开(公告)日：2025-01-07
申请号：US16932792
申请日：2020-07-19
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Sungwon Ha , Runyun Pan
IPC: C23C16/455 , C23C16/458 , C23C16/505 , H01L21/67 , H05B3/28 , H05B6/40 , H05B6/44
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The processing systems may include a faceplate heater seated on the faceplate. The faceplate heater may include a first heater coil extending proximate a first area of the faceplate. The faceplate heater may include a second heater coil extending proximate a second area of the faceplate.
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公开(公告)号：US20240352580A1
公开(公告)日：2024-10-24
申请号：US18303391
申请日：2023-04-19
Applicant: Applied Materials, Inc.
Inventor： Zaoyuan Ge , Prasath Poomani , Yin Xiong , Ajit Laxman Kulkarni , Sungwon Ha , Amit Bansal , Abdul Aziz Khaja , Sarah Michelle Bobek , Badri N. Ramamurthi
CPC classification number: C23C16/4408 , C23C16/4412 , C23C16/52
Abstract: Exemplary semiconductor processing chambers may include a chamber body having sidewalls and a base. The chambers may include a pumping liner seated atop the chamber body. The pumping liner may at least partially define an annular pumping plenum and at least one exhaust aperture that fluidly couples the pumping plenum with an interior of the chamber body. The chambers may include a purge ring seated below the pumping liner. The purge ring may define an annular channel that extends about a body of the purge ring. The purge ring may define a gas inlet that is fluidly coupled with the annular channel. The purge ring may define purge ports that are disposed at different radial positions about the purge ring, each of the purge ports being aligned and in fluid communication with the pumping plenum. The chambers may include a purge gas source coupled with the gas inlet.
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Patent Agency Ranking
公开(公告)号：US11584994B2
公开(公告)日：2023-02-21
申请号：US16716233
申请日：2019-12-16
Applicant: Applied Materials, Inc.
Inventor： Sarah Michelle Bobek , Venkata Sharat Chandra Parimi , Prashant Kumar Kulshreshtha , Vinay K. Prabhakar , Kwangduk Douglas Lee , Sungwon Ha , Jian Li
IPC: C23C16/458 , C23C16/46
Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.
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公开(公告)号：US11875969B2
公开(公告)日：2024-01-16
申请号：US16856917
申请日：2020-04-23
Applicant: Applied Materials, Inc.
Inventor： Fei Wu , Abdul Aziz Khaja , Sungwon Ha , Vinay K. Prabhakar , Ganesh Balasubramanian
CPC classification number: H01J37/32055 , H01J37/32899 , H01J37/3435 , H01J37/3438
Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.
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公开(公告)号：US20230298870A1
公开(公告)日：2023-09-21
申请号：US18324688
申请日：2023-05-26
Applicant: Applied Materials, Inc.
Inventor： Fei Wu , Abdul Aziz Khaja , Sungwon Ha , Ganesh Balasubramanian , Vinay Prabhakar
IPC: H01J37/32
CPC classification number: H01J37/32871 , H01J37/32862 , H01J2237/335
Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.
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公开(公告)号：US20220020612A1
公开(公告)日：2022-01-20
申请号：US16932792
申请日：2020-07-19
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Sungwon Ha , Runyun Pan
IPC: H01L21/67 , H05B6/44 , H05B6/40 , C23C16/458
Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The processing systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The processing systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The processing systems may include a faceplate heater seated on the faceplate. The faceplate heater may include a first heater coil extending proximate a first area of the faceplate. The faceplate heater may include a second heater coil extending proximate a second area of the faceplate.
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公开(公告)号：US20210202218A1
公开(公告)日：2021-07-01
申请号：US16728552
申请日：2019-12-27
Applicant: Applied Materials, Inc.
Inventor： Venkata Sharat Chandra Parimi , Satish Radhakrishnan , Xiaoquan Min , Sarah Michelle Bobek , Sungwon Ha , Prashant Kumar Kulshreshtha , Vinay Prabhakar
Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.
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